是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.76 |
峰值回流温度(摄氏度): | 260 | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMRF1304N | NXP |
获取价格 |
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | |
MMRF1304NR1 | NXP |
获取价格 |
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | |
MMRF1305H | NXP |
获取价格 |
RF Power LDMOS Transistors | |
MMRF1305HR5 | NXP |
获取价格 |
RF Power LDMOS Transistors | |
MMRF1305HS | NXP |
获取价格 |
Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | |
MMRF1305HSR5 | NXP |
获取价格 |
RF Power LDMOS Transistors | |
MMRF1306H | NXP |
获取价格 |
RF Power LDMOS Transistors | |
MMRF1306HR5 | NXP |
获取价格 |
Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | |
MMRF1306HSR5 | NXP |
获取价格 |
RF Power LDMOS Transistors | |
MMRF1308H | NXP |
获取价格 |
RF Power LDMOS Transistors |