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MMRF1304LR5 PDF预览

MMRF1304LR5

更新时间: 2024-11-02 20:58:11
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 380K
描述
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

MMRF1304LR5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.76
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMRF1304LR5 数据手册

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Document Number: MMRF1304L  
Rev. 0, 12/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
High Ruggedness N--Channel  
Enhancement--Mode Lateral MOSFET  
MMRF1304LR5  
RF power transistor suitable for both narrowband and broadband CW or  
pulse applications operating at frequencies from 1.8 to 2000 MHz, such as  
military radio communications and radar. This device is fabricated using  
Freescale’s enhanced ruggedness platform and is suitable for use in  
applications where high VSWRs are encountered.  
1.8--2000 MHz, 25 W, 50 V  
WIDEBAND  
Typical Performance: VDD = 50 Vdc  
RF POWER LDMOS TRANSISTOR  
P
(W)  
Frequency  
(MHz)  
G
(dB)  
(%)  
IMD  
(dBc)  
out  
ps  
D
Signal Type  
(1,3)  
1.8--30  
Two--Tone  
(10 kHz spacing)  
25 PEP  
25.0  
50.0  
-- 2 8  
-- 3 2  
(2,3)  
30--512  
Two--Tone  
(200 kHz spacing)  
25 PEP  
25 Peak  
17.3  
25.9  
32.0  
74.0  
(4)  
512  
Pulse  
(100 sec, 20%  
Duty Cycle)  
N I -- 3 6 0 -- 2  
(4)  
512  
CW  
25  
26.0  
75.0  
Load Mismatch/Ruggedness  
Frequency  
P
Test  
in  
(MHz)  
Signal Type  
VSWR  
(W)  
Voltage  
Result  
(1)  
>65:1  
at all Phase  
Angles  
50  
No Device  
Degradation  
30  
CW  
0.11  
(3 dB  
Overdrive)  
Gate  
Drain  
2
1
(2)  
512  
CW  
0.95  
(3 dB  
Overdrive)  
(4)  
512  
Pulse  
(100 sec, 20%  
Duty Cycle)  
0.14 Peak  
(3 dB  
Overdrive)  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
(4)  
512  
CW  
0.14  
(3 dB  
Overdrive)  
Figure 1. Pin Connections  
1. Measured in 1.8--30 MHz broadband reference circuit.  
2. Measured in 30--512 MHz broadband reference circuit.  
3. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
4. Measured in 512 MHz narrowband test circuit.  
Features  
Wide Operating Frequency Range  
Extreme Ruggedness  
Unmatched, Capable of Very Broadband Operation  
Integrated Stability Enhancements  
Low Thermal Resistance  
Extended ESD Protection Circuit  
In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel.  
Freescale Semiconductor, Inc., 2013. All rights reserved.  

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