Datasheet > MMRF1316N

MMRF1316N

更新时间： 2024-09-14 15:19:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
22页	1014K
描述
WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

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MMRF1316N 数据手册

Document Number: MMRF1316N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

MMRF1316NR1

N--Channel Enhancement--Mode Lateral MOSFET

This high ruggedness device is designed for use in high VSWR military,

aerospace and defense, radar and radio communications applications. It is an

unmatched input and output design allowing wide frequency range utilization,

between 1.8 and 600 MHz.

1.8–600 MHz, 300 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

Typical Performance: V_DD= 50 Vdc

(W)

Frequency

(MHz)



out

Signal Type

(dB)

23.8

25.0

27.0

(%)

80.1

70.0

71.0

(1,3)

87.5--108

361

300

(2)

230

(2)

Pulse (100 sec, 20%

300 Peak

Duty Cycle)

Load Mismatch/Ruggedness

Frequency

TO--270WB--4

PLASTIC

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(1)

> 65:1

at all Phase

Angles

No Device

Degradation

(3 dB

Overdrive)

(2)

230

Pulse

(100 sec, 20%

Duty Cycle)

1.16 Peak

(3 dB

Overdrive)

Drain A

Drain B

Gate A

Gate B

1. Measured in 87.5–108 MHz broadband reference circuit.

2. Measured in 230 MHz narrowband test circuit.

3. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Features

(Top View)



Wide Operating Frequency Range

Extreme Ruggedness

Unmatched Input and Output Allowing Wide Frequency Range Utilization

Integrated Stability Enhancements

Low Thermal Resistance

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

Integrated ESD Protection Circuitry

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

MMRF1316NR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...22

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