Datasheet > MMRF1310HSR5

MMRF1310HSR5

更新时间： 2024-11-06 20:06:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	570K
描述
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMRF1310HSR5 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.64	Base Number Matches：	1

MMRF1310HSR5 数据手册

Document Number: MMRF1310H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1310HR5

MMRF1310HSR5

These high ruggedness devices are designed for use in high VSWR military,

industrial (including laser and plasma exciters), broadcast (analog and digital),

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization between 1.8 and 600 MHz.



Typical Performance: V_DD= 50 Vdc, I_DQ= 100 mA

(W)

(dB)



(%)

IRL

(dB)

out

1.8--600 MHz, 300 W CW, 50 V

BROADBAND

Signal Type

(MHz)

RF POWER MOSFETs

Pulse (100 sec,

300 Peak

230

26.5

74.0

-- 1 6

20% Duty Cycle)

300 Avg.

130

25.0

80.0

-- 1 5



Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz,

at all Phase Angles



300 W CW Output Power



300 W Pulse Peak Power, 20% Duty Cycle, 100 sec

NI--780H--4L

MMRF1310HR5

Capable of 300 W CW Operation

Features



Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Characterized with Series Equivalent Large--Signal Impedance Parameters

NI--780H--4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width,

13--inch Reel.

NI--780S--4L

MMRF1310HSR5



NI--780S--4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width,

13--inch Reel.

Gate A

Gate B

Drain A

Drain B

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Symbol

Value

--0.5, +133

--6.0, +10

--65 to +150

150

Unit

Vdc

C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

stg

C

(Top View)

Total Device Dissipation @ T = 25C

1050

5.26

W/C

Note: The backside of the package is the

source terminal for the transistors.

Derate above 25C

(1,2)

Operating Junction Temperature

225

C

Figure 1. Pin Connections

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

(4)

Thermal Resistance, Junction to Case

C/W

Pulse: Case Temperature 75C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle,

50 Vdc, I = 100 mA, 230 MHz

CW: Case Temperature 87C, 300 W CW, 50 Vdc, I = 1100 mA, 230 MHz



0.05

0.19



1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Same test circuit is used for both pulsed and CW.

MMRF1310HR5 MMRF1310HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

中文翻译

下载PDF

与MMRF1310HSR5相关器件

型号	品牌	获取价格	描述	数据表
MMRF1312GS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1312H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1312HS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1314GS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1314H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1314HS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1315N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1315NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1316N	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1316NR1	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

与MMRF1310HSR5相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

MMRF1310HSR5

MMRF1310HSR5 技术参数

MMRF1310HSR5 数据手册

与MMRF1310HSR5相关器件

与MMRF1310HSR5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMRF1310HSR5

MMRF1310HSR5 技术参数

MMRF1310HSR5 数据手册

与MMRF1310HSR5相关器件

与MMRF1310HSR5相关文章

您还可以找

您在本页遇到什么问题？