Datasheet > MMRF1314H

MMRF1314H

更新时间： 2024-11-07 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	473K
描述
RF Power LDMOS Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMRF1314H 数据手册

Document Number: MMRF1314H

Rev. 1, 1/2017

NXP Semiconductors

Technical Data

MMRF1314H

MMRF1314HS

MMRF1314GS

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These RF power devices are designed for pulse applications operating at

frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse

applications and are ideal for use in high power military and commercial L--Band

radar applications.

1200–1400 MHz, 1000 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

Typical Performance: In 1200–1400 MHz reference circuit, V = 52 Vdc,

= 100 mA

DQ(A+B)

Frequency

(MHz)

(W)

out

Signal Type

(dB)

15.5

17.2

17.0

(%)

47.5

47.0

46.5

1200

1300

1400

Pulse

1130 Peak

1170 Peak

1000 Peak

NI--1230H--4S

MMRF1314H

(128 μsec, 10% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

NI--1230S--4S

MMRF1314HS

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(1)

1400

Pulse

(128 μsec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

31.6 Peak

(3 dB

Overdrive)

No Device

Degradation

1. Measured in 1400 MHz production test fixture.

NI--1230GS--4L

MMRF1314GS

Features

•

Internally input and output matched for broadband operation and ease of use

Device can be used in a single--ended, push--pull or quadrature configuration

Qualified up to a maximum of 52 V_DDoperation

High ruggedness, handles > 20:1 VSWR

Gate A

Gate B

Drain A

Drain B

Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation and gate voltage pulsing

•

Characterized with series equivalent large--signal impedance parameters

Typical Applications

Military and commercial L--Band radar systems

•

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

MMRF1314H MMRF1314HS MMRF1314GS

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...17

中文翻译

下载PDF

与MMRF1314H相关器件

型号	品牌	获取价格	描述	数据表
MMRF1314HS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1315N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1315NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1316N	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1316NR1	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1317H	NXP	获取价格	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1317HS	NXP	获取价格	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1318N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1318NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1320GN	NXP	获取价格	RF Power LDMOS Transistors