Datasheet > MMRF1308HR5

MMRF1308HR5

更新时间： 2024-11-07 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	605K
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RF Power LDMOS Transistors

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数据手册

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MMRF1308HR5 数据手册

Document Number: MMRF1308H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1308HR5

MMRF1308HSR5

These high ruggedness devices are designed for use in high VSWR military,

aerospace and defense, industrial (including laser and plasma exciters),

broadcast (analog and digital), and radio/land mobile applications. They are

unmatched input and output designs allowing wide frequency range utilization,

between 1.8 and 600 MHz.

1.8--600 MHz, 600 W CW, 50 V

BROADBAND



Typical Performance: V_DD= 50 Vdc, I_DQ= 100 mA

RF POWER MOSFETs



IRL

out

Signal Type

(W)

(MHz)

(dB)

(%)

(dB)

Pulse (100 sec,

20% Duty Cycle)

600 Peak

230

25.0

74.6

-- 1 8

-- 1 7

600 Avg.

24.6

75.2



Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness

600 W Pulse Peak Power, 20% Duty Cycle, 100 sec

NI--1230H--4S

MMRF1308HR5



Features



Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

NI--1230S--4S

MMRF1308HSR5

Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

PARTS ARE PUSH--PULL



Characterized with Series Equivalent Large--Signal Impedance Parameters

In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Gate A

Gate B

Drain A

Drain B

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +133

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

(Top View)

C

Note: The backside of the package is the

source terminal for the transistors.

Total Device Dissipation @ T = 25C

Derate above 25C

1667

8.33

W/C

(1,2)

Figure 1. Pin Connections

Operating Junction Temperature

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol Value

Unit

Thermal Resistance, Junction to Case

C/W

Case Temperature 68C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz

Case Temperature 60C, 600 W CW, 100 mA, 230 MHz

0.022

0.12



1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1308HR5 MMRF1308HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

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与MMRF1308HR5相关器件

型号	品牌	获取价格	描述	数据表
MMRF1308HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1310H	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1310HR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1310HS	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1310HSR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1312GS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1312H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1312HS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1314GS	NXP	获取价格	RF Power LDMOS Transistors
MMRF1314H	NXP	获取价格	RF Power LDMOS Transistors

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