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MMRF1308HR5 PDF预览

MMRF1308HR5

更新时间: 2024-11-22 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 605K
描述
RF Power LDMOS Transistors

MMRF1308HR5 数据手册

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Document Number: MMRF1308H  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MMRF1308HR5  
MMRF1308HSR5  
These high ruggedness devices are designed for use in high VSWR military,  
aerospace and defense, industrial (including laser and plasma exciters),  
broadcast (analog and digital), and radio/land mobile applications. They are  
unmatched input and output designs allowing wide frequency range utilization,  
between 1.8 and 600 MHz.  
1.8--600 MHz, 600 W CW, 50 V  
BROADBAND  
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA  
RF POWER MOSFETs  
P
f
G
D
IRL  
out  
ps  
Signal Type  
(W)  
(MHz)  
(dB)  
(%)  
(dB)  
Pulse (100 sec,  
20% Duty Cycle)  
600 Peak  
230  
230  
25.0  
74.6  
-- 1 8  
-- 1 7  
CW  
600 Avg.  
24.6  
75.2  
Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc,  
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness  
600 W Pulse Peak Power, 20% Duty Cycle, 100 sec  
NI--1230H--4S  
MMRF1308HR5  
Features  
Unmatched Input and Output Allowing Wide Frequency Range Utilization  
Device can be used Single--Ended or in a Push--Pull Configuration  
Qualified Up to a Maximum of 50 VDD Operation  
Characterized from 30 V to 50 V for Extended Power Range  
Suitable for Linear Application with Appropriate Biasing  
NI--1230S--4S  
MMRF1308HSR5  
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range  
for Improved Class C Operation  
PARTS ARE PUSH--PULL  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  
Gate A  
Gate B  
Drain A  
Drain B  
3
4
1
2
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +133  
--6.0, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Drain--Source Voltage  
Gate--Source Voltage  
Storage Temperature Range  
Case Operating Temperature  
V
DSS  
V
GS  
T
stg  
(Top View)  
T
C
C  
Note: The backside of the package is the  
source terminal for the transistors.  
Total Device Dissipation @ T = 25C  
Derate above 25C  
P
1667  
8.33  
W
W/C  
C
D
(1,2)  
Figure 1. Pin Connections  
Operating Junction Temperature  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol Value  
Unit  
Thermal Resistance, Junction to Case  
C/W  
Case Temperature 68C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz  
Case Temperature 60C, 600 W CW, 100 mA, 230 MHz  
Z
R
0.022  
0.12  
JC  
JC  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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