5秒后页面跳转
MMRF2010N PDF预览

MMRF2010N

更新时间: 2024-09-16 01:18:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
23页 807K
描述
RF LDMOS Wideband Integrated Power Amplifiers

MMRF2010N 数据手册

 浏览型号MMRF2010N的Datasheet PDF文件第2页浏览型号MMRF2010N的Datasheet PDF文件第3页浏览型号MMRF2010N的Datasheet PDF文件第4页浏览型号MMRF2010N的Datasheet PDF文件第5页浏览型号MMRF2010N的Datasheet PDF文件第6页浏览型号MMRF2010N的Datasheet PDF文件第7页 
Document Number: MMRF2010N  
Rev. 1, 04/2017  
NXP Semiconductors  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MMRF2010N  
MMRF2010GN  
The MMRF2010N is a 2--stage RFIC designed for IFF transponder  
applications operating from 1030 to 1090 MHz. These devices are suitable for  
use in pulse applications such as IFF and secondary radar transponders.  
Typical Wideband Performance: (52 Vdc, T = 25°C)  
1030–1090 MHz, 250 W PEAK, 50 V  
RF LDMOS INTEGRATED  
POWER AMPLIFIERS  
A
Frequency  
(MHz)  
P
(W)  
G
2nd Stage Eff.  
(%)  
out  
ps  
(1)  
Signal Type  
(dB)  
34.1  
33.4  
33.6  
32.6  
Pulse  
250 Peak  
1030  
1090  
1030  
1090  
61.0  
61.9  
61.5  
62.9  
(128 μsec, 10% Duty Cycle)  
Pulse  
250 Peak  
(2 msec, 20% Duty Cycle)  
TO--270WB--14  
PLASTIC  
MMRF2010N  
Narrowband Performance: (50 Vdc, T = 25°C)  
A
P
Frequency  
(MHz)  
G
(dB)  
2nd Stage Eff.  
(%)  
out  
ps  
Signal Type  
(W)  
(2)  
1090  
Pulse  
250 Peak  
32.1  
61.4  
(128 μsec, 10% Duty Cycle)  
TO--270WBG--14  
PLASTIC  
MMRF2010GN  
Load Mismatch/Ruggedness  
Frequency  
P
(W)  
Test  
Voltage  
in  
Signal Type  
VSWR  
(MHz)  
Result  
(1)  
1090  
Pulse  
> 20:1 at all  
0.316 W  
Peak  
(3 dB  
52  
No Device  
Degradation  
(2 msec, 20% Phase Angles  
Duty Cycle)  
Overdrive)  
1. Measured in 1030–1090 MHz reference circuit.  
2. Measured in 1090 MHz narrowband test circuit.  
Features  
Characterized over 1030–1090 MHz  
On--chip input (50 ohm) and interstage matching  
Single ended  
Integrated ESD protection  
Low thermal resistance  
Integrated quiescent current temperature compensation with  
enable/disable function (3)  
Typical Applications  
Driver PA for high power pulse applications  
IFF and secondary radar  
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  
© 2015, 2017 NXP B.V.  

与MMRF2010N相关器件

型号 品牌 获取价格 描述 数据表
MMRF2010NR1 NXP

获取价格

RF MOSFET LDMOS 50V TO270WB-14
MMRF5014H NXP

获取价格

WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5014H-200MHZ NXP

获取价格

RF Power Field-Effect Transistor
MMRF5014HR5 NXP

获取价格

WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5017HSR5 NXP

获取价格

RF Power Field-Effect Transistor
MMRF5018HS NXP

获取价格

Airfast RF Power GaN Transistor, 125 W CW over 1-2700 MHz, 50 V
MMS002AA MICROSEMI

获取价格

Diversity Switch
MMS004AA-Attenuator MICROCHIP

获取价格

The MMS004AA is a low-power high-attenuation DC-50 GHz PHEMT FET attenuator. The voltage c
MMS006PP3 MICROSEMI

获取价格

Diversity Switch
MMS006PP3E-Switch-SPDT-Eval MICROCHIP

获取价格

The MMS006PP3E is the EVB for the MMS006PP3