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MMRF2005GN

更新时间： 2024-09-16 01:18:19
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恩智浦 - NXP /
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18页 739K
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RF LDMOS Wideband Integrated Power Amplifiers

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Document Number: MMRF2005N  
Rev. 0, 8/2015  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MMRF2005N  
MMRF2005GN  
The MMRF2005N wideband integrated circuit is designed with on--chip  
matching that makes it usable from 728 to 960 MHz. This multi--stage structure  
is rated for 24 to 32 V operation and is ideal for applications including radio  
communications, data links and UHF radar.  
Driver Application — 900 MHz  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1  
106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping,  
=
728–960 MHz, 3.2 W AVG., 28 V  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%  
Probability on CCDF.  
G
(dB)  
PAE  
(%)  
ACPR  
(dBc)  
ps  
(1)  
Frequency  
920 MHz  
940 MHz  
960 MHz  
36.6  
36.8  
36.6  
16.1  
16.7  
17.3  
–48.0  
–48.7  
–48.6  
TO--270WB--16  
PLASTIC  
MMRF2005N  
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 W CW  
Output Power (3 dB Input Overdrive from Rated Pout  
)
Driver Application — 700 MHz  
TO--270WBG--16  
PLASTIC  
MMRF2005GN  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1  
106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping,  
=
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%  
Probability on CCDF.  
G
(dB)  
PAE  
(%)  
ACPR  
(dBc)  
ps  
Frequency  
728 MHz  
748 MHz  
768 MHz  
36.4  
36.4  
36.4  
16.1  
16.1  
16.0  
–47.7  
–47.8  
–47.9  
Features  
Characterized with series equivalent large--signal impedance parameters  
and common source S--parameters  
On--chip matching (50 ohm input, DC blocked, > 5 ohm output)  
Integrated quiescent current temperature compensation with  
enable/disable function (2)  
Integrated ESD protection  
GND  
1
2
3
4
5
16  
15  
GND  
NC  
NC  
NC  
V
DS1  
GND  
RF  
6
14  
RF /V  
in  
out DS2  
V
DS1  
7
8
GND  
V
GS1  
GS2  
NC  
V
RF  
9
RF /V  
out DS2  
in  
10  
13  
12  
NC  
GND  
GND  
11  
V
V
GS1  
GS2  
(Top View)  
Quiescent Current  
Temperature Compensation  
(2)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application circuit. See Fig. 9.  
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.  
Freescale Semiconductor, Inc., 2015. All rights reserved.  
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