Datasheet > MMRF1320N

MMRF1320N

更新时间： 2024-11-03 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	510K
描述
RF Power LDMOS Transistors

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数据手册

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MMRF1320N 数据手册

Document Number: MMRF1320N

Rev. 0, 7/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

MMRF1320N

MMRF1320GN

These high ruggedness devices are designed for use in high VSWR defense

and commercial radio communications and HF, VHF and UHF radar

applications. The unmatched input and output designs allow wide frequency

range utilization, from 1.8 to 600 MHz.

1.8–600 MHz, 150 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance: V_DD= 50 Vdc

(W)

Frequency

(MHz)



out

Signal Type

(dB)

26.3

26.1

(%)

72.0

70.3

TO--270WB--4

PLASTIC

230

150

Pulse

150 Peak

MMRF1320N

(100 sec, 20%

Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

(MHz)

VSWR

TO--270WBG--4

PLASTIC

MMRF1320GN

Result

230

Pulse

> 65:1

at all

Phase

Angles

0.62 Peak

(3 dB

Overdrive)

No Device

Degradation

(100 sec, 20%

Duty Cycle)

Features



Wide operating frequency range

Extreme ruggedness

Unmatched input and output allowing wide frequency range utilization

Integrated stability enhancements

Low thermal resistance

Integrated ESD protection circuitry

Drain A

Drain B

Gate A

Gate B

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

MMRF1320N MMRF1320GN

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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