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MMRF2007GN

更新时间： 2024-09-16 01:18:19
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恩智浦 - NXP /
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17页 403K
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RF LDMOS Wideband Integrated Power Amplifiers

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MMRF2007GN 数据手册

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Document Number: MMRF2007N  
Rev. 0, 6/2015  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MMRF2007N  
MMRF2007GN  
The MMRF2007N wideband integrated circuit is designed with on--chip  
pre--matching that makes it usable from 136 to 940 MHz. This multi--stage  
structure is rated for 26 to 32 V operation, has a 2--stage design with off--chip  
matching for the input and covers all typical modulation formats. This device is  
ideal for use in military and commercial VHF and UHF radio base station or  
radar driver applications.  
136–940 MHz, 35 W AVG., 28 V  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Typical Two--Tone Performance: VDD1 = 28 Vdc, VDD2 = 25 Vdc,  
IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 W Avg.  
G
(dB)  
PAE  
(%)  
IMD  
(dBc)  
ps  
Frequency  
850 MHz  
900 MHz  
940 MHz  
30.6  
31.9  
32.6  
40.1  
42.4  
42.1  
–30.5  
–31.0  
–31.3  
TO--270WBL--16  
PLASTIC  
MMRF2007N  
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 W CW Output  
Power (3 dB Input Overdrive from Rated Pout), Designed for  
Enhanced Ruggedness  
Features  
Characterized with series equivalent large--signal impedance parameters and  
common source S--parameters  
On--chip prematching. On--chip stabilization.  
Integrated quiescent current temperature compensation with  
enable/disable function (1)  
TO--270WBLG--16  
PLASTIC  
MMRF2007GN  
Integrated ESD protection  
RF  
in2A  
RF  
/V  
G1A  
out1A D1A  
1
2
3
RF  
in2A  
V
RF  
/V  
out1A D1A  
GND  
RF  
RF  
/V  
in1A  
16  
15  
4
GND  
RF  
V
/
/
out2A D2A  
out2A  
out2B  
5
V
G1A  
D2A  
6
RF  
in1A  
G2A  
G2B  
V
7
V
G2A  
in2B  
Quiescent Current  
Temperature Compensation  
8
(1)  
V
9
RF  
V
GND  
GND  
in1B  
G1B  
RF  
V
10  
11  
12  
13  
14  
RF  
D2B  
RF  
/V  
out1B D1B  
RF  
/V  
out1B D1B  
V
G2B  
in1B  
RF  
in2B  
(Top View)  
RF  
/V  
RF  
out2B D2B  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
V
G1B  
Quiescent Current  
Temperature Compensation  
(1)  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current  
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.  
Freescale Semiconductor, Inc., 2015. All rights reserved.  
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