Datasheet > MMRF2005N

MMRF2005N

更新时间： 2024-11-03 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	739K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MMRF2005N 数据手册

Document Number: MMRF2005N

Rev. 0, 8/2015

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

MMRF2005N

MMRF2005GN

The MMRF2005N wideband integrated circuit is designed with on--chip

matching that makes it usable from 728 to 960 MHz. This multi--stage structure

is rated for 24 to 32 V operation and is ideal for applications including radio

communications, data links and UHF radar.

Driver Application — 900 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ1

106 mA, I_DQ2= 285 mA, P_out= 3.2 W Avg., IQ Magnitude Clipping,

728–960 MHz, 3.2 W AVG., 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

(dB)

PAE

(%)

ACPR

(dBc)

(1)

Frequency

920 MHz

940 MHz

960 MHz

36.6

36.8

36.6

16.1

16.7

17.3

–48.0

–48.7

–48.6

TO--270WB--16

PLASTIC

MMRF2005N



Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 W CW

Output Power (3 dB Input Overdrive from Rated P_out

)

Driver Application — 700 MHz

TO--270WBG--16

PLASTIC

MMRF2005GN



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ1

106 mA, I_DQ2= 285 mA, P_out= 3.2 W Avg., IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

(dB)

PAE

(%)

ACPR

(dBc)

Frequency

728 MHz

748 MHz

768 MHz

36.4

16.1

16.0

–47.7

–47.8

–47.9

Features



Characterized with series equivalent large--signal impedance parameters

and common source S--parameters



On--chip matching (50 ohm input, DC blocked, > 5 ohm output)

Integrated quiescent current temperature compensation with

enable/disable function ⁽²⁾



Integrated ESD protection

GND

DS1

GND

RF /V

out DS2

DS1

GND

GS1

GS2

RF /V

out DS2

GND

GS1

GS2

(Top View)

Quiescent Current

Temperature Compensation

(2)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application circuit. See Fig. 9.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.

MMRF2005N MMRF2005GN

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

中文翻译

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与MMRF2005N相关器件

型号	品牌	获取价格	描述	数据表
MMRF2006N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MMRF2006NT1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MMRF2007GN	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2007N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010GN	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010NR1	NXP	获取价格	RF MOSFET LDMOS 50V TO270WB-14
MMRF5014H	NXP	获取价格	WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5014H-200MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MMRF5014HR5	NXP	获取价格	WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V

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