Datasheet > MMRF2006N

MMRF2006N

更新时间： 2024-11-03 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	764K
描述
RF LDMOS Wideband Integrated Power Amplifier

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MMRF2006N 数据手册

Document Number: MMRF2006N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifier

The MMRF2006N wideband integrated circuit is designed with on--chip

matching that makes it usable from 1805 to 2170 MHz. This multi--stage

structure is rated for 26 to 32 V operation and can be used in many RF

amplifier modulation formats.

MMRF2006NT1

Driver Application — 2100 MHz

1805--2170 MHz, 20 W CW, 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ1=

40 mA, I_DQ2= 230 mA, P_out= 2.4 W Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF.

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

32.6

32.4

16.8

17.0

7.7

7.6

7.5

--51.3

--51.4

--51.6



Capable of Handling 10:1 VSWR @ 32 Vdc, 2140 MHz, P_out= 33 W

CW (3 dB Input Overdrive from Rated P_out

Typical P_out@ 1 dB Compression Point ≃ 20 W CW

)

PQFN 8  8

PLASTIC

Driver Application — 1800 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ1= 40 mA, I_DQ2= 230 mA, P_out= 2.4 W Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB

@ 0.01% Probability on CCDF.

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

31.8

17.4

7.6

7.7

--51.2

--50.2

--51.0

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

On--Chip Matching (50 Ohm Input, DC Blocked)

Integrated Quiescent Current Temperature Compensation with Enable/Disable Function ⁽¹⁾

Integrated ESD Protection

In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.

GS2

GS1

24 23 22 21 20 19

Quiescent Current

Temperature Compensation

GND

(1)

RF /V

out DS2

RF /V

out DS2

GND

RF /V

out DS2

8 9 10 11 12

DS1

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/ApplicationNotes -- AN1977 orAN1987.

MMRF2006NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

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与MMRF2006N相关器件

型号	品牌	获取价格	描述	数据表
MMRF2006NT1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MMRF2007GN	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2007N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010GN	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2010NR1	NXP	获取价格	RF MOSFET LDMOS 50V TO270WB-14
MMRF5014H	NXP	获取价格	WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5014H-200MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MMRF5014HR5	NXP	获取价格	WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5017HSR5	NXP	获取价格	RF Power Field-Effect Transistor

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