Datasheet > MMRF1315N

MMRF1315N

更新时间： 2024-09-17 01:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	838K
描述
RF Power LDMOS Transistor

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数据手册

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MMRF1315N 数据手册

Document Number: MMRF1315N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

MMRF1315NR1

Designed for wideband defense, industrial and commercial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

this device are ideal for large--signal, common--source amplifier applications in

28 V RF systems.

500--1000 MHz, 60 W CW, 28 V

BROADBAND

RF POWER LDMOS TRANSISTOR



Typical Single--Carrier N--CDMA Performance @ 880 MHz, V_DD= 28 Vdc,

I_DQ= 450 mA, P_out= 14 W Avg., IS--95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 21.1 dB

Drain Efficiency — 33%

ACPR @ 750 kHz Offset — --45.7 dBc in 30 kHz Channel Bandwidth



Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

GSM EDGE Application

T O -- 2 7 0 -- 2

PLASTIC



Typical GSM EDGE Performance: V_DD= 28 Vdc, I_DQ= 500 mA,

P_out= 21 W Avg., Full Frequency Band (920--960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = --62 dBc

Spectral Regrowth @ 600 kHz Offset = --78 dBc

EVM — 1.5% rms

GSM Application



Typical GSM Performance: V_DD= 28 Vdc, I_DQ= 500 mA, P_out= 60 W, Full

Frequency Band (920--960 MHz)

Gate

Drain

Power Gain — 20 dB

Drain Efficiency — 63%

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Integrated ESD Protection

225C Capable Plastic Package

In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-- 0.5, +66

-- 0.5, +12

32, +0

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

Maximum Operation Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

-- 65 to +150

150

C

(1,2)

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 80C, 60 W CW

Case Temperature 78C, 14 W CW

0.77

0.88

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators

by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1315NR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

中文翻译

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与MMRF1315N相关器件

型号	品牌	获取价格	描述	数据表
MMRF1315NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1316N	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1316NR1	NXP	获取价格	WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1317H	NXP	获取价格	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1317HS	NXP	获取价格	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1318N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1318NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1320GN	NXP	获取价格	RF Power LDMOS Transistors
MMRF1320N	NXP	获取价格	RF Power LDMOS Transistors
MMRF2004NBR1	NXP	获取价格	WiMax RF LDMOS Wideband Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V

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