Document Number: MMRF1315N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MMRF1315NR1
Designed for wideband defense, industrial and commercial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device are ideal for large--signal, common--source amplifier applications in
28 V RF systems.
500--1000 MHz, 60 W CW, 28 V
BROADBAND
RF POWER LDMOS TRANSISTOR
Typical Single--Carrier N--CDMA Performance @ 880 MHz, VDD = 28 Vdc,
IDQ = 450 mA, Pout = 14 W Avg., IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — --45.7 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
T O -- 2 7 0 -- 2
PLASTIC
Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 500 mA,
Pout = 21 W Avg., Full Frequency Band (920--960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = --62 dBc
Spectral Regrowth @ 600 kHz Offset = --78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, Full
Frequency Band (920--960 MHz)
Gate
Drain
1
2
Power Gain — 20 dB
Drain Efficiency — 63%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
-- 0.5, +66
-- 0.5, +12
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
V
T
stg
-- 65 to +150
150
T
C
C
(1,2)
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 80C, 60 W CW
Case Temperature 78C, 14 W CW
0.77
0.88
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1315NR1
RF Device Data
Freescale Semiconductor, Inc.
1