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MMRF1315N PDF预览

MMRF1315N

更新时间: 2024-11-03 01:23:43
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 838K
描述
RF Power LDMOS Transistor

MMRF1315N 数据手册

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Document Number: MMRF1315N  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
MMRF1315NR1  
Designed for wideband defense, industrial and commercial applications with  
frequencies up to 1000 MHz. The high gain and broadband performance of  
this device are ideal for large--signal, common--source amplifier applications in  
28 V RF systems.  
500--1000 MHz, 60 W CW, 28 V  
BROADBAND  
RF POWER LDMOS TRANSISTOR  
Typical Single--Carrier N--CDMA Performance @ 880 MHz, VDD = 28 Vdc,  
IDQ = 450 mA, Pout = 14 W Avg., IS--95 CDMA (Pilot, Sync, Paging,  
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =  
9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 21.1 dB  
Drain Efficiency — 33%  
ACPR @ 750 kHz Offset — --45.7 dBc in 30 kHz Channel Bandwidth  
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,  
Designed for Enhanced Ruggedness  
GSM EDGE Application  
T O -- 2 7 0 -- 2  
PLASTIC  
Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 500 mA,  
Pout = 21 W Avg., Full Frequency Band (920--960 MHz)  
Power Gain — 20 dB  
Drain Efficiency — 46%  
Spectral Regrowth @ 400 kHz Offset = --62 dBc  
Spectral Regrowth @ 600 kHz Offset = --78 dBc  
EVM — 1.5% rms  
GSM Application  
Typical GSM Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, Full  
Frequency Band (920--960 MHz)  
Gate  
Drain  
1
2
Power Gain — 20 dB  
Drain Efficiency — 63%  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Integrated ESD Protection  
225C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-- 0.5, +66  
-- 0.5, +12  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
DD  
Maximum Operation Voltage  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
V
T
stg  
-- 65 to +150  
150  
T
C
C  
(1,2)  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
JC  
Case Temperature 80C, 60 W CW  
Case Temperature 78C, 14 W CW  
0.77  
0.88  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators  
by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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