5秒后页面跳转
MMRF1312H PDF预览

MMRF1312H

更新时间: 2024-09-17 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 428K
描述
RF Power LDMOS Transistors

MMRF1312H 数据手册

 浏览型号MMRF1312H的Datasheet PDF文件第2页浏览型号MMRF1312H的Datasheet PDF文件第3页浏览型号MMRF1312H的Datasheet PDF文件第4页浏览型号MMRF1312H的Datasheet PDF文件第5页浏览型号MMRF1312H的Datasheet PDF文件第6页浏览型号MMRF1312H的Datasheet PDF文件第7页 
Document Number: MMRF1312H  
Rev. 0, 3/2016  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
MMRF1312H  
MMRF1312HS  
MMRF1312GS  
Enhancement--Mode Lateral MOSFETs  
These RF power devices are designed for pulse applications operating at  
frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse  
applications with large duty cycles and long pulses and are ideal for use in high  
power military and commercial L--Band radar applications such as IFF and  
DME/TACAN.  
900–1215 MHz, 1000 W PEAK, 52 V  
AIRFAST RF POWER LDMOS  
TRANSISTORS  
Typical Short Pulse Performance: In 900–1215 MHz reference circuit,  
V
DD  
= 52 Vdc, I  
= 100 mA  
DQ(A+B)  
Frequency  
(MHz)  
P
(W)  
G
(dB)  
D
(%)  
NI--1230H--4S  
MMRF1312H  
out  
ps  
Signal Type  
900  
960  
Pulse  
1615 Peak  
15.2  
54.0  
(128 sec, 10% Duty Cycle)  
1560 Peak  
1500 Peak  
1530 Peak  
1200 Peak  
17.3  
17.8  
18.0  
19.2  
55.7  
53.8  
54.5  
58.5  
1030  
1090  
1215  
NI--1230S--4S  
MMRF1312HS  
Load Mismatch/Ruggedness  
Frequency  
P
(W)  
Test  
Voltage  
in  
NI--1230GS--4L  
MMRF1312GS  
Signal Type  
VSWR  
(MHz)  
Result  
(1)  
1030  
Pulse  
> 20:1 at all  
20.2 Peak  
(3 dB  
52  
No Device  
Degradation  
(128 sec, 10% Phase Angles  
Duty Cycle)  
Overdrive)  
1. Measured in 1030 MHz narrowband reference circuit.  
Features  
Gate A  
Gate B  
Drain A  
Drain B  
3
4
1
2
Internally input and output matched for broadband operation and ease of use  
Device can be used in a single--ended, push--pull or quadrature configuration  
Qualified up to a maximum of 52 VDD operation  
High ruggedness, handles > 20:1 VSWR  
Integrated ESD protection with greater negative voltage range for improved  
Class C operation and gate voltage pulsing  
(Top View)  
Characterized with series equivalent large--signal impedance parameters  
Note: The backside of the package is the  
source terminal for the transistor.  
Typical Applications  
Figure 1. Pin Connections  
Air traffic control systems (ATC), including ground--based secondary radars  
such as IFF interrogators or transponders  
Distance measuring equipment (DME)  
Tactical air navigation (TACAN)  
Freescale Semiconductor, Inc., 2016. All rights reserved.  

与MMRF1312H相关器件

型号 品牌 获取价格 描述 数据表
MMRF1312HS NXP

获取价格

RF Power LDMOS Transistors
MMRF1314GS NXP

获取价格

RF Power LDMOS Transistors
MMRF1314H NXP

获取价格

RF Power LDMOS Transistors
MMRF1314HS NXP

获取价格

RF Power LDMOS Transistors
MMRF1315N NXP

获取价格

RF Power LDMOS Transistor
MMRF1315NR1 NXP

获取价格

RF Power LDMOS Transistor
MMRF1316N NXP

获取价格

WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1316NR1 NXP

获取价格

WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
MMRF1317H NXP

获取价格

RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1317HS NXP

获取价格

RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V