Datasheet > MMRF1306HSR5

MMRF1306HSR5

更新时间： 2024-11-19 01:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	481K
描述
RF Power LDMOS Transistors

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数据手册

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MMRF1306HSR5 数据手册

Document Number: MMRF1306H

Rev. 1, 8/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MMRF1306HR5

MMRF1306HSR5

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR CW or

pulse applications, such as HF, VHF, and low--band UHF radar and high power

radio communications. They are unmatched input and output designs allowing

wide frequency utilization from 1.8 to 600 MHz.

1.8–600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS



Typical Performance: V_DD= 50 Vdc, I_DQ= 100 mA

(W)

(dB)



(%)

out

Signal Type

(MHz)

Pulse

1250 Peak

230

24.0

74.0

(100 sec, 20% Duty Cycle)

1250 CW

230

22.9

74.6

Application Circuits ⁽¹⁾— Typical Performance

Frequency

(MHz)

out

(W)

(dB)



NI--1230H--4S

MMRF1306HR5

Signal Type

(%)

1300

1250

1100

1250

225

81.36

87.5--108

144--148

170--230

352

DVB--T

NI--1230S--4S

MMRF1306HSR5

Pulse

(200 sec,

1250

21.5

20% Duty Cycle)

352

500

1150

1000

20.5

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

Gate A

Gate B

Drain A

Drain B

Frequency

(MHz)

(W)

Test

Voltage

out

Signal Type

VSWR

Result

230

Pulse

>65:1 at all

1500 Peak

(3 dB

No Device

Degradation

(100 sec, 20% Phase Angles

Duty Cycle)

Overdrive)

(Top View)

Features



Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Note: The backside of the package is the

source terminal for the transistors.

Figure 1. Pin Connections

Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation



Characterized with Series Equivalent Large--Signal Impedance Parameters

In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

MMRF1306HR5 MMRF1306HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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MMRF1310HR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
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