5秒后页面跳转
MMRF1304N PDF预览

MMRF1304N

更新时间: 2024-11-19 15:19:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 456K
描述
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V

MMRF1304N 数据手册

 浏览型号MMRF1304N的Datasheet PDF文件第2页浏览型号MMRF1304N的Datasheet PDF文件第3页浏览型号MMRF1304N的Datasheet PDF文件第4页浏览型号MMRF1304N的Datasheet PDF文件第5页浏览型号MMRF1304N的Datasheet PDF文件第6页浏览型号MMRF1304N的Datasheet PDF文件第7页 
Document Number: MMRF1304N  
Rev. 0, 12/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
MMRF1304NR1  
Enhancement--Mode Lateral MOSFETs  
MMRF1304GNR1  
RF power transistors suitable for both narrowband and broadband CW or  
pulse applications operating at frequencies from 1.8 to 2000 MHz, such as  
military radio communications and radar. These devices are fabricated using  
Freescale’s enhanced ruggedness platform and are suitable for use in  
applications where high VSWRs are encountered.  
1.8--2000 MHz, 25 W, 50 V  
WIDEBAND  
RF POWER LDMOS TRANSISTORS  
Typical Performance: V = 50 Vdc  
DD  
(1)  
P
(W)  
Frequency  
(MHz)  
G
(dB)  
(%)  
IMD  
out  
ps  
D
Signal Type  
(dBc)  
(2,6)  
1.8 to 30  
Two--Tone  
(10 kHz spacing)  
25 PEP  
25  
51  
-- 3 0  
-- 3 2  
(3,6)  
30--512  
Two--Tone  
(200 kHz spacing)  
25 PEP  
25 Peak  
17.1  
25.4  
30.1  
74.5  
T O -- 2 7 0 -- 2  
PLASTIC  
MMRF1304NR1  
(4)  
512  
Pulse (100 sec,  
20% Duty Cycle)  
(4)  
512  
CW  
CW  
25  
25  
25.5  
22.5  
74.7  
60  
(5)  
1030  
Load Mismatch/Ruggedness  
Frequency  
P
(W)  
Test  
Voltage  
in  
TO--270G--2  
PLASTIC  
MMRF1304GNR1  
Signal Type  
VSWR  
(MHz)  
Result  
(2)  
>65:1  
50  
No Device  
Degradation  
30  
CW  
0.23  
(3 dB  
Overdrive)  
at all Phase  
Angles  
(3)  
512  
CW  
1.6  
(3 dB  
Overdrive)  
(4)  
512  
Pulse  
(100 sec, 20%  
Duty Cycle)  
0.14 Peak  
(3 dB  
Overdrive)  
Gate  
Drain  
1
2
(4)  
512  
CW  
CW  
0.14  
(3 dB  
Overdrive  
(Top View)  
(5)  
1030  
0.34  
(3 dB  
Note: The backside of the package is the  
source terminal for the transistor.  
Overdrive  
1. Distortion products are referenced to one of two tones.  
2. Measured in 1.8--30 MHz broadband reference circuit.  
3. Measured in 30--512 MHz broadband reference circuit.  
4. Measured in 512 MHz narrowband test circuit.  
Figure 1. Pin Connections  
5. Measured in 1030 MHz narrowband test circuit.  
6. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
Features  
Wide Operating Frequency Range  
Extreme Ruggedness  
Unmatched, Capable of Very Broadband Operation  
Integrated Stability Enhancements  
Low Thermal Resistance  
Extended ESD Protection Circuit  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
Freescale Semiconductor, Inc., 2013. All rights reserved.  

与MMRF1304N相关器件

型号 品牌 获取价格 描述 数据表
MMRF1304NR1 NXP

获取价格

Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
MMRF1305H NXP

获取价格

RF Power LDMOS Transistors
MMRF1305HR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1305HS NXP

获取价格

Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
MMRF1305HSR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1306H NXP

获取价格

RF Power LDMOS Transistors
MMRF1306HR5 NXP

获取价格

Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
MMRF1306HSR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1308H NXP

获取价格

RF Power LDMOS Transistors
MMRF1308HR5 NXP

获取价格

RF Power LDMOS Transistors