Datasheet > MMRF1050H

MMRF1050H

更新时间： 2024-11-03 15:19:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	418K
描述
Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V

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MMRF1050H 数据手册

Document Number: MMRF1050H

Rev. 0, 02/2021

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

MMRF1050H

This RF power transistor is designed for short pulse applications operating at

frequencies from 850 to 950 MHz.

850–950 MHz, 1050 W PEAK, 50 V

RF POWER LDMOS TRANSISTOR

Typical Performance: V = 50 Vdc, I

= 100 mA

DQ(A+B)

Frequency

(MHz)

(W)

(dB)



(%)

out

Signal Type

950

Pulse

1050 Peak

21.3

63.7

(100 sec, 20% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

NI--1230H--4S

950

Pulse

> 20:1 at all

15 W Peak

(3 dB

No Device

Degradation

(100 sec, 20% Phase Angles

Duty Cycle)

Overdrive)

Features

Gate A

Gate B

Drain A

Drain B



Internally input and output matched for broadband operation and ease of use

Device can be used in a single--ended, push--pull or quadrature configuration

Qualified up to 50 V

High ruggedness, handles > 20:1 VSWR

Integrated ESD protection with greater negative voltage range for improved

Class C operation and gate voltage pulsing

(Top View)



Characterized with series equivalent large--signal impedance parameters

Note: The backside of the package is the

source terminal for the transistor.

Typical Applications

Land-- or sea--based UHF radar



Figure 1. Pin Connections

 2021 NXP B.V.

MMRF1050H

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...12

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