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MMRF1018NR1 PDF预览

MMRF1018NR1

更新时间: 2024-11-22 01:12:23
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恩智浦 - NXP /
页数 文件大小 规格书
19页 804K
描述
RF Power LDMOS Transistors

MMRF1018NR1 数据手册

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Document Number: MMRF1018N  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
Enhancement--Mode Lateral MOSFETs  
These 90 W RF power LDMOS transistors are designed for wideband RF  
power amplifiers covering the frequency range of 470 to 860 MHz.  
MMRF1018NR1  
MMRF1018NBR1  
Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ  
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.  
=
P
(W)  
f
G
(dB)  
(%)  
ACPR  
(dBc)  
out  
ps  
D
Signal Type  
(MHz)  
470--860 MHz, 90 W, 50 V  
BROADBAND  
RF POWER LDMOS TRANSISTORS  
DVB--T (8k OFDM)  
18 Avg.  
860  
22.0  
28.5  
--62.0  
Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc,  
IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
Output  
Signal PAR Shoulder  
IMD  
TO--270WB--4  
PLASTIC  
MMRF1018NR1  
P
f
G
D
out  
ps  
Signal Type  
(W)  
(MHz) (dB)  
(%)  
26.8  
28.0  
28.3  
(dB)  
8.6  
(dBc)  
--31.8  
--34.4  
--29.2  
DVB--T (8k OFDM) 18 Avg.  
470  
650  
860  
21.6  
22.9  
21.9  
8.7  
7.9  
Features  
TO--272WB--4  
PLASTIC  
MMRF1018NBR1  
Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz,  
90 W CW Output Power  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Input Matched for Ease of Use  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
PARTS ARE SINGLE--ENDED  
Excellent Thermal Stability  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Gate A  
Gate B  
Drain A  
Drain B  
225C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Drain--Source Voltage  
V
--0.5, +120  
--6.0, +10  
-- 65 to +150  
150  
Vdc  
Vdc  
C  
DSS  
(Top View)  
Gate--Source Voltage  
V
GS  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
Storage Temperature Range  
Case Operating Temperature  
T
stg  
T
C  
C
Figure 1. Pin Connections  
(1,2)  
Operating Junction Temperature  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
JC  
Case Temperature 76C, 18 W CW, 50 Vdc, I = 350 mA, 860 MHz  
0.79  
0.82  
DQ  
Case Temperature 80C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz  
DQ  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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