Document Number: MMRF1018N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
These 90 W RF power LDMOS transistors are designed for wideband RF
power amplifiers covering the frequency range of 470 to 860 MHz.
MMRF1018NR1
MMRF1018NBR1
Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
=
P
(W)
f
G
(dB)
(%)
ACPR
(dBc)
out
ps
D
Signal Type
(MHz)
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
DVB--T (8k OFDM)
18 Avg.
860
22.0
28.5
--62.0
Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc,
IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Output
Signal PAR Shoulder
IMD
TO--270WB--4
PLASTIC
MMRF1018NR1
P
f
G
D
out
ps
Signal Type
(W)
(MHz) (dB)
(%)
26.8
28.0
28.3
(dB)
8.6
(dBc)
--31.8
--34.4
--29.2
DVB--T (8k OFDM) 18 Avg.
470
650
860
21.6
22.9
21.9
8.7
7.9
Features
TO--272WB--4
PLASTIC
MMRF1018NBR1
Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz,
90 W CW Output Power
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
PARTS ARE SINGLE--ENDED
Excellent Thermal Stability
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Gate A
Gate B
Drain A
Drain B
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
V
--0.5, +120
--6.0, +10
-- 65 to +150
150
Vdc
Vdc
C
DSS
(Top View)
Gate--Source Voltage
V
GS
Note: Exposed backside of the package is
the source terminal for the transistor.
Storage Temperature Range
Case Operating Temperature
T
stg
T
C
C
Figure 1. Pin Connections
(1,2)
Operating Junction Temperature
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 76C, 18 W CW, 50 Vdc, I = 350 mA, 860 MHz
0.79
0.82
DQ
Case Temperature 80C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1018NR1 MMRF1018NBR1
RF Device Data
Freescale Semiconductor, Inc.
1