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MMRF1020-04GN PDF预览

MMRF1020-04GN

更新时间: 2024-11-03 14:59:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
20页 505K
描述
Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V

MMRF1020-04GN 数据手册

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Document Number: MMRF1020--04N  
Rev. 0, 2/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
MMRF1020--04NR3  
MMRF1020--04GNR3  
N--Channel Enhancement--Mode Lateral MOSFETs  
These 100 W symmetrical Doherty RF power LDMOS transistors are  
designed for cellular base station applications covering the frequency range  
of 720 to 960 MHz. The transistors are also suitable for wideband power  
amplifier applications from 600 to 1000 MHz and saturated power levels up to  
500 watts.  
720–960 MHz, 100 W AVG., 48 V  
RF POWER LDMOS  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,  
DQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
TRANSISTORS  
I
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
920 MHz  
940 MHz  
960 MHz  
(dB)  
19.5  
19.5  
19.2  
(%)  
48.5  
49.5  
48.0  
7.2  
7.1  
7.0  
–29.2  
–32.0  
–35.7  
OM--780--4L  
PLASTIC  
MMRF1020--04NR3  
Features  
Production Tested in a Symmetrical Doherty Configuration  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
OM--780G--4L  
PLASTIC  
MMRF1020--04GNR3  
Designed for Digital Predistortion Error Correction Systems  
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.  
Carrier  
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
RF /V  
inB GSB  
RF /V  
outB DSB  
Peaking  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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