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MMRF1020-04GNR3 PDF预览

MMRF1020-04GNR3

更新时间: 2024-11-02 20:08:43
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
20页 497K
描述
RF POWER, FET

MMRF1020-04GNR3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.76
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:105 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:225 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMRF1020-04GNR3 数据手册

 浏览型号MMRF1020-04GNR3的Datasheet PDF文件第2页浏览型号MMRF1020-04GNR3的Datasheet PDF文件第3页浏览型号MMRF1020-04GNR3的Datasheet PDF文件第4页浏览型号MMRF1020-04GNR3的Datasheet PDF文件第5页浏览型号MMRF1020-04GNR3的Datasheet PDF文件第6页浏览型号MMRF1020-04GNR3的Datasheet PDF文件第7页 
Document Number: MMRF1020--04N  
Rev. 0, 2/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
MMRF1020--04NR3  
MMRF1020--04GNR3  
N--Channel Enhancement--Mode Lateral MOSFETs  
These 100 W symmetrical Doherty RF power LDMOS transistors are  
designed for cellular base station applications covering the frequency range  
of 720 to 960 MHz. The transistors are also suitable for wideband power  
amplifier applications from 600 to 1000 MHz and saturated power levels up to  
500 watts.  
720–960 MHz, 100 W AVG., 48 V  
RF POWER LDMOS  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,  
DQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
TRANSISTORS  
I
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
920 MHz  
940 MHz  
960 MHz  
(dB)  
19.5  
19.5  
19.2  
(%)  
48.5  
49.5  
48.0  
7.2  
7.1  
7.0  
–29.2  
–32.0  
–35.7  
OM--780--4L  
PLASTIC  
MMRF1020--04NR3  
Features  
Production Tested in a Symmetrical Doherty Configuration  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
OM--780G--4L  
PLASTIC  
MMRF1020--04GNR3  
Designed for Digital Predistortion Error Correction Systems  
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.  
Carrier  
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
RF /V  
inB GSB  
RF /V  
outB DSB  
Peaking  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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