Datasheet > MMRF1014N

MMRF1014N

更新时间： 2024-11-07 01:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	758K
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RF Power LDMOS Transistor

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MMRF1014N 数据手册

Document Number: MMRF1014N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for Class A or Class AB power amplifier applications with

frequencies up to 2000 MHz. Suitable for analog and digital modulation and

multicarrier amplifier applications.

MMRF1014NT1



Typical Two--Tone Performance @ 1960 MHz, 28 Vdc, I_DQ= 50 mA,

P_out= 4 W PEP

1--2000 MHz, 4 W, 28 V

CLASS A/AB

RF POWER MOSFET

Power Gain — 18 dB

Drain Efficiency — 33%

IMD — --34 dBc

Typical Two--Tone Performance @ 900 MHz, 28 Vdc, I_DQ= 50 mA,

P_out= 4 W PEP

Power Gain — 19 dB

Drain Efficiency — 33%

IMD — --39 dBc

Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

PLD--1.5

PLASTIC

On--Chip RF Feedback for Broadband Stability

Integrated ESD Protection

In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7--inch Reel.

Gate

Drain

Note: The center pad on the backside of

the package is the source terminal

for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +68

--0.5, +12

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Operating Junction Temperature

stg

C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 76C, 4 W PEP, Two--Tone

Case Temperature 79C, 4 W CW

8.8

8.5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1014NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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