Datasheet > MMRF1018NBR1

MMRF1018NBR1

更新时间： 2024-11-03 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	804K
描述
RF Power LDMOS Transistors

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数据手册

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MMRF1018NBR1 数据手册

Document Number: MMRF1018N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

Enhancement--Mode Lateral MOSFETs

These 90 W RF power LDMOS transistors are designed for wideband RF

power amplifiers covering the frequency range of 470 to 860 MHz.

MMRF1018NR1

MMRF1018NBR1



Typical Performance (Narrowband Test Circuit): V_DD= 50 Vdc, I_DQ

350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

(W)

(dB)



(%)

ACPR

(dBc)

out

Signal Type

(MHz)

470--860 MHz, 90 W, 50 V

BROADBAND

RF POWER LDMOS TRANSISTORS

DVB--T (8k OFDM)

18 Avg.

860

22.0

28.5

--62.0



Typical Performance (Broadband Reference Circuit): V_DD= 50 Vdc,

I_DQ= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF.

Output

Signal PAR Shoulder

IMD

TO--270WB--4

PLASTIC

MMRF1018NR1



out

Signal Type

(W)

(MHz) (dB)

(%)

26.8

28.0

28.3

(dB)

8.6

(dBc)

--31.8

--34.4

--29.2

DVB--T (8k OFDM) 18 Avg.

470

650

860

21.6

22.9

21.9

8.7

7.9

Features

TO--272WB--4

PLASTIC

MMRF1018NBR1



Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz,

90 W CW Output Power



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Input Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

PARTS ARE SINGLE--ENDED

Excellent Thermal Stability

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Gate A

Gate B

Drain A

Drain B



225C Capable Plastic Package

In Tape and Reel. R1 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +120

--6.0, +10

-- 65 to +150

150

Vdc

C

DSS

(Top View)

Gate--Source Voltage

Note: Exposed backside of the package is

the source terminal for the transistor.

Storage Temperature Range

Case Operating Temperature

stg

C

Figure 1. Pin Connections

(1,2)

Operating Junction Temperature

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 76C, 18 W CW, 50 Vdc, I = 350 mA, 860 MHz

0.79

0.82

Case Temperature 80C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1018NR1 MMRF1018NBR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...19

中文翻译

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与MMRF1018NBR1相关器件

型号	品牌	获取价格	描述	数据表
MMRF1018NR1	NXP	获取价格	RF Power LDMOS Transistors
MMRF1020-04GN	NXP	获取价格	Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
MMRF1020-04GNR3	NXP	获取价格	RF POWER, FET
MMRF1020-04N	NXP	获取价格	RF Power LDMOS Transistors
MMRF1020-04NR3	NXP	获取价格	RF Power LDMOS Transistors
MMRF1050H	NXP	获取价格	Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V
MMRF1304GN	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
MMRF1304GNR1	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
MMRF1304LR5	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
MMRF1304N	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V

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