Datasheet > MMRF1017NR3

MMRF1017NR3

更新时间： 2024-09-17 01:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	422K
描述
RF Power LDMOS Transistor

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MMRF1017NR3 数据手册

Document Number: MMRF1017N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

MMRF1017NR3

This 80 W RF power LDMOS transistor is designed for wideband RF power

amplifiers covering the frequency range of 720 to 960 MHz.



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 1400 mA, P_out= 80 W Avg., Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

720--960 MHz, 80 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Output PAR ACPR

IRL

Frequency

920 MHz

940 MHz

960 MHz

(dB)

20.0

20.1

20.0

(%)

35.9

36.2

36.1

(dB)

(dBc)

--38.0

--37.6

--37.5

(dB)

6.3

-- 1 4

-- 1 8

-- 1 7

6.2

6.1

Features

OM--780--2L

PLASTIC



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

Gate

Drain

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

MMRF1017NR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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