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MMRF1015NR1 PDF预览

MMRF1015NR1

更新时间: 2024-09-17 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
20页 743K
描述
RF Power LDMOS Transistors

MMRF1015NR1 数据手册

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Document Number: MMRF1015N  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
Designed for Class A or Class AB power amplifier applications with  
frequencies up to 2000 MHz. Suitable for analog and digital modulation and  
multicarrier amplifier applications.  
MMRF1015NR1  
MMRF1015GNR1  
Typical Two--Tone Performance at 960 MHz: VDD = 28 Vdc, IDQ = 125 mA,  
P
out = 10 W PEP  
Power Gain — 18 dB  
Drain Efficiency — 32%  
IMD — --37 dBc  
1--2000 MHz, 10 W, 28 V  
CLASS A/AB  
RF POWER MOSFETs  
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output  
Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
On--Chip RF Feedback for Broadband Stability  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
T O -- 2 7 0 -- 2  
PLASTIC  
MMRF1015NR1  
225C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
TO--270G--2  
PLASTIC  
MMRF1015GNR1  
Gate  
Drain  
1
2
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +68  
--0.5, +12  
--65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
DSS  
(Top View)  
Gate--Source Voltage  
V
GS  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
T
C
C  
Figure 1. Pin Connections  
(1,2)  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
2.85  
C/W  
JC  
Case Temperature 80C, 10 W PEP  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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