Datasheet > MMRF1013H

MMRF1013H

更新时间： 2024-11-07 01:12:23

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恩智浦 - NXP		/
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RF Power LDMOS Transistors

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数据手册

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MMRF1013H 数据手册

Document Number: MMRF1013H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MMRF1013HR5

MMRF1013HSR5

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for aerospace and defense S--band radar

pulse applications operating at frequencies between 2700 and 3200 MHz.



Typical Pulse Performance: V_DD= 30 Vdc, I_DQ= 100 mA

(W)

(dB)



(%)

IRL

(dB)

out

2700--2900 MHz, 320 W, 30 V

PULSE S--BAND

Signal Type

(MHz)

Pulse (100 sec,

10% Duty Cycle)

320 Peak

2900

13.3

50.5

-- 1 7

RF POWER MOSFETs



Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,

300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated P_out

Features

)



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230H--4S

MMRF1013HR5



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230S--4S

MMRF1013HSR5

PARTS ARE PUSH--PULL

Gate A

Gate B

Drain A

Drain B

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

(Top View)

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

Note: The backside of the package is the

source terminal for the transistors.

C

(1,2)

Figure 1. Pin Connections

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz

Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz

0.06

0.10

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1013HR5 MMRF1013HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

中文翻译

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与MMRF1013H相关器件

型号	品牌	获取价格	描述	数据表
MMRF1013HR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1013HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1014N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1014NT1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1015GNR1	NXP	获取价格	RF Power LDMOS Transistors
MMRF1015N	NXP	获取价格	RF Power LDMOS Transistors
MMRF1015NR1	NXP	获取价格	RF Power LDMOS Transistors
MMRF1017N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1017NR3	NXP	获取价格	RF Power LDMOS Transistor
MMRF1018N	NXP	获取价格	RF Power LDMOS Transistors

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