Datasheet > MMRF1013HR5

MMRF1013HR5

更新时间： 2024-11-19 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	896K
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RF Power LDMOS Transistors

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数据手册

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MMRF1013HR5 数据手册

Document Number: MMRF1013H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MMRF1013HR5

MMRF1013HSR5

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for aerospace and defense S--band radar

pulse applications operating at frequencies between 2700 and 3200 MHz.



Typical Pulse Performance: V_DD= 30 Vdc, I_DQ= 100 mA

(W)

(dB)



(%)

IRL

(dB)

out

2700--2900 MHz, 320 W, 30 V

PULSE S--BAND

Signal Type

(MHz)

Pulse (100 sec,

10% Duty Cycle)

320 Peak

2900

13.3

50.5

-- 1 7

RF POWER MOSFETs



Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,

300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated P_out

Features

)



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230H--4S

MMRF1013HR5



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230S--4S

MMRF1013HSR5

PARTS ARE PUSH--PULL

Gate A

Gate B

Drain A

Drain B

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

(Top View)

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

Note: The backside of the package is the

source terminal for the transistors.

C

(1,2)

Figure 1. Pin Connections

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz

Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz

0.06

0.10

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1013HR5 MMRF1013HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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