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MMRF1013HSR5 PDF预览

MMRF1013HSR5

更新时间: 2024-11-22 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 896K
描述
RF Power LDMOS Transistors

MMRF1013HSR5 数据手册

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Document Number: MMRF1013H  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
MMRF1013HR5  
MMRF1013HSR5  
N--Channel Enhancement--Mode Lateral MOSFETs  
RF power transistors designed for aerospace and defense S--band radar  
pulse applications operating at frequencies between 2700 and 3200 MHz.  
Typical Pulse Performance: VDD = 30 Vdc, IDQ = 100 mA  
P
(W)  
f
G
(dB)  
(%)  
IRL  
(dB)  
out  
ps  
D
2700--2900 MHz, 320 W, 30 V  
PULSE S--BAND  
Signal Type  
(MHz)  
Pulse (100 sec,  
10% Duty Cycle)  
320 Peak  
2900  
13.3  
50.5  
-- 1 7  
RF POWER MOSFETs  
Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,  
300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout  
Features  
)
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
Designed for Push--Pull Operation  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
NI--1230H--4S  
MMRF1013HR5  
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  
NI--1230S--4S  
MMRF1013HSR5  
PARTS ARE PUSH--PULL  
Gate A  
Gate B  
Drain A  
Drain B  
3
4
1
2
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +65  
--6.0, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
(Top View)  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
Note: The backside of the package is the  
source terminal for the transistors.  
T
C
C  
(1,2)  
Figure 1. Pin Connections  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Z
C/W  
JC  
Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz  
Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz  
0.06  
0.10  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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