Document Number: MMRF1013H
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
MMRF1013HR5
MMRF1013HSR5
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for aerospace and defense S--band radar
pulse applications operating at frequencies between 2700 and 3200 MHz.
Typical Pulse Performance: VDD = 30 Vdc, IDQ = 100 mA
P
(W)
f
G
(dB)
(%)
IRL
(dB)
out
ps
D
2700--2900 MHz, 320 W, 30 V
PULSE S--BAND
Signal Type
(MHz)
Pulse (100 sec,
10% Duty Cycle)
320 Peak
2900
13.3
50.5
-- 1 7
RF POWER MOSFETs
Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,
300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout
Features
)
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230H--4S
MMRF1013HR5
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4S
MMRF1013HSR5
PARTS ARE PUSH--PULL
Gate A
Gate B
Drain A
Drain B
3
4
1
2
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
(Top View)
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
Note: The backside of the package is the
source terminal for the transistors.
T
C
C
(1,2)
Figure 1. Pin Connections
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Z
C/W
JC
Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz
Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz
0.06
0.10
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
1