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MMRF1011HSR5 PDF预览

MMRF1011HSR5

更新时间: 2024-11-07 01:12:23
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恩智浦 - NXP /
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13页 645K
描述
RF Power LDMOS Transistors

MMRF1011HSR5 数据手册

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Document Number: MMRF1011H  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MMRF1011HR5  
MMRF1011HSR5  
RF power transistors designed for applications operating at frequencies  
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are  
suitable for use in pulse applications, such as L-- Band radar.  
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout =  
330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec,  
Duty Cycle = 12%  
Power Gain — 18 dB  
1400 MHz, 330 W, 50 V  
PULSE L--BAND  
RF POWER MOSFETs  
Drain Efficiency — 60.5%  
Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 330 W Peak Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
NI--780H--2L  
MMRF1011HR5  
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  
NI--780S--2L  
MMRF1011HSR5  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +100  
--6.0, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Gate  
Drain  
1
2
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
(Top View)  
T
C
C  
Figure 1. Pin Connections  
(1,2)  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
C/W  
Thermal Resistance, Junction to Case  
Z
0.13  
JC  
Case Temperature 65C, 330 W Peak, 300 sec Pulse Width, 12% Duty Cycle  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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