5秒后页面跳转
MMRF1011HSR5 PDF预览

MMRF1011HSR5

更新时间: 2024-11-19 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 645K
描述
RF Power LDMOS Transistors

MMRF1011HSR5 数据手册

 浏览型号MMRF1011HSR5的Datasheet PDF文件第2页浏览型号MMRF1011HSR5的Datasheet PDF文件第3页浏览型号MMRF1011HSR5的Datasheet PDF文件第4页浏览型号MMRF1011HSR5的Datasheet PDF文件第5页浏览型号MMRF1011HSR5的Datasheet PDF文件第6页浏览型号MMRF1011HSR5的Datasheet PDF文件第7页 
Document Number: MMRF1011H  
Rev. 0, 7/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MMRF1011HR5  
MMRF1011HSR5  
RF power transistors designed for applications operating at frequencies  
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are  
suitable for use in pulse applications, such as L-- Band radar.  
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout =  
330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec,  
Duty Cycle = 12%  
Power Gain — 18 dB  
1400 MHz, 330 W, 50 V  
PULSE L--BAND  
RF POWER MOSFETs  
Drain Efficiency — 60.5%  
Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 330 W Peak Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
NI--780H--2L  
MMRF1011HR5  
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  
NI--780S--2L  
MMRF1011HSR5  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +100  
--6.0, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Gate  
Drain  
1
2
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
(Top View)  
T
C
C  
Figure 1. Pin Connections  
(1,2)  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
C/W  
Thermal Resistance, Junction to Case  
Z
0.13  
JC  
Case Temperature 65C, 330 W Peak, 300 sec Pulse Width, 12% Duty Cycle  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

与MMRF1011HSR5相关器件

型号 品牌 获取价格 描述 数据表
MMRF1013H NXP

获取价格

RF Power LDMOS Transistors
MMRF1013HR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1013HSR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1014N NXP

获取价格

RF Power LDMOS Transistor
MMRF1014NT1 NXP

获取价格

RF Power LDMOS Transistor
MMRF1015GNR1 NXP

获取价格

RF Power LDMOS Transistors
MMRF1015N NXP

获取价格

RF Power LDMOS Transistors
MMRF1015NR1 NXP

获取价格

RF Power LDMOS Transistors
MMRF1017N NXP

获取价格

RF Power LDMOS Transistor
MMRF1017NR3 NXP

获取价格

RF Power LDMOS Transistor