Datasheet > MMRF1011H

MMRF1011H

更新时间： 2024-11-07 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	645K
描述
RF Power LDMOS Transistors

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MMRF1011H 数据手册

Document Number: MMRF1011H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1011HR5

MMRF1011HSR5

RF power transistors designed for applications operating at frequencies

between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are

suitable for use in pulse applications, such as L-- Band radar.



Typical Pulse Performance: V_DD= 50 Vdc, I_DQ= 150 mA, P_out=

330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec,

Duty Cycle = 12%

Power Gain — 18 dB

1400 MHz, 330 W, 50 V

PULSE L--BAND

RF POWER MOSFETs

Drain Efficiency — 60.5%



Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 330 W Peak Power

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--780H--2L

MMRF1011HR5



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--780S--2L

MMRF1011HSR5

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +100

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Gate

Drain

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

(Top View)

C

Figure 1. Pin Connections

(1,2)

225

C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



0.13

Case Temperature 65C, 330 W Peak, 300 sec Pulse Width, 12% Duty Cycle

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1011HR5 MMRF1011HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

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