5秒后页面跳转
MMRF1008GH PDF预览

MMRF1008GH

更新时间: 2024-11-02 01:12:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
19页 1196K
描述
RF Power Field Effect Transistors

MMRF1008GH 数据手册

 浏览型号MMRF1008GH的Datasheet PDF文件第2页浏览型号MMRF1008GH的Datasheet PDF文件第3页浏览型号MMRF1008GH的Datasheet PDF文件第4页浏览型号MMRF1008GH的Datasheet PDF文件第5页浏览型号MMRF1008GH的Datasheet PDF文件第6页浏览型号MMRF1008GH的Datasheet PDF文件第7页 
Document Number: MMRF1008H  
Rev. 1, 5/2016  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MMRF1008H  
MMRF1008HS  
MMRF1008GH  
N--Channel Enhancement--Mode Lateral MOSFETs  
RF power transistors designed for applications operating at frequencies  
from 900 to 1215 MHz. These devices are suitable for use in defense and  
commercial pulse applications, such as IFF and DME.  
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout =  
275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec,  
Duty Cycle = 10%  
960--1215 MHz, 275 W, 50 V  
PULSE  
Power Gain — 20.3 dB  
Drain Efficiency — 65.5%  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power  
Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout  
250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =  
128 sec, Duty Cycle = 10%  
=
NI--780H--2L  
MMRF1008H  
Power Gain — 19.8 dB  
Drain Efficiency — 58%  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
NI--780S--2L  
MMRF1008HS  
NI--780GH--2L  
MMRF1008GH  
Gate  
Drain  
1
2
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2013, 2016. All rights reserved.  

与MMRF1008GH相关器件

型号 品牌 获取价格 描述 数据表
MMRF1008H NXP

获取价格

RF Power Field Effect Transistors
MMRF1008HS NXP

获取价格

RF Power Field Effect Transistors
MMRF1009H NXP

获取价格

RF Power Field Effect Transistors
MMRF1009HR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1009HSR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1011H NXP

获取价格

RF Power LDMOS Transistors
MMRF1011HR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1011HSR5 NXP

获取价格

RF Power LDMOS Transistors
MMRF1013H NXP

获取价格

RF Power LDMOS Transistors
MMRF1013HR5 NXP

获取价格

RF Power LDMOS Transistors