Datasheet > MMRF1008HS

MMRF1008HS

更新时间： 2024-11-02 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	1196K
描述
RF Power Field Effect Transistors

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MMRF1008HS 数据手册

Document Number: MMRF1008H

Rev. 1, 5/2016

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MMRF1008H

MMRF1008HS

MMRF1008GH

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for applications operating at frequencies

from 900 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications, such as IFF and DME.



Typical Pulse Performance: V_DD= 50 Vdc, I_DQ= 100 mA, P_out=

275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec,

Duty Cycle = 10%

960--1215 MHz, 275 W, 50 V

PULSE

Power Gain — 20.3 dB

Drain Efficiency — 65.5%

LATERAL N--CHANNEL

RF POWER MOSFETs



Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power

Typical Broadband Performance: V_DD= 50 Vdc, I_DQ= 100 mA, P_out

250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =

128 sec, Duty Cycle = 10%

NI--780H--2L

MMRF1008H

Power Gain — 19.8 dB

Drain Efficiency — 58%

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--780S--2L

MMRF1008HS

NI--780GH--2L

MMRF1008GH

Gate

Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

MMRF1008H MMRF1008HS MMRF1008GH

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...19

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