Datasheet > MMIS60R750PTH

MMIS60R750PTH

更新时间： 2024-11-06 01:18:35

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1192K
描述
600V 0.75(ohm) N-channel MOSFET

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MMIS60R750PTH 数据手册

MMIS60R750P Datasheet

MMIS60R750P

600V 0.75Ω N-channel MOSFET

 Description

MMIS60R750P is power MOSFET using magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.75

Ω

I_D

5.7

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

TO-251-VS

(IPAK-VS)

MMIS60R750PTH

60R750P

-55 ~ 150℃

Tube

Halogen Free

Mar. 2016 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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