5秒后页面跳转
MMIX1F180N25T PDF预览

MMIX1F180N25T

更新时间: 2024-11-07 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE PC光电二极管电源电路
页数 文件大小 规格书
8页 257K
描述
SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系统。 由于外形小巧且采用小尺寸封装,因此可为多个器件采用同一个散热器,从而节省PCB空间。 除了更小、更轻

MMIX1F180N25T 数据手册

 浏览型号MMIX1F180N25T的Datasheet PDF文件第2页浏览型号MMIX1F180N25T的Datasheet PDF文件第3页浏览型号MMIX1F180N25T的Datasheet PDF文件第4页浏览型号MMIX1F180N25T的Datasheet PDF文件第5页浏览型号MMIX1F180N25T的Datasheet PDF文件第6页浏览型号MMIX1F180N25T的Datasheet PDF文件第7页 
Preliminary Technical Information  
GigaMOSTM TrenchTM  
HiperFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 132A  
RDS(on) 13m  
MMIX1F180N25T  
trr  
200ns  
(Electrically Isolated Tab)  
D
N-Channel Enhancement Mode  
Avalanche Rated  
G
Fast Intrinsic Diode  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Isolated Tab  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
250  
250  
V
V
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
132  
500  
A
A
S
G
IA  
TC = 25C  
TC = 25C  
90  
5
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
PD  
TC = 25C  
570  
20  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Substrate  
- Excellent Thermal Transfer  
- Increased Temperature and Power  
Cycling Capability  
- High Isolation Voltage (2500V~)  
Very High Current Handling  
Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
FC  
50..200 / 11..45  
8
N/lb  
g
Weight  
Fast Intrinsic Diode  
Avalanche Rated  
Very Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
250  
3.0  
Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
Applications  
200 nA  
IDSS  
50 A  
2.5 mA  
DC-DC Converters and Off-Line UPS  
Note 2, TJ = 125C  
Primary-Side Switch  
High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 90A, Note 1  
13 m  
DS100438A(9/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

与MMIX1F180N25T相关器件

型号 品牌 获取价格 描述 数据表
MMIX1F210N30P3 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1F230N20T LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1F40N110P LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1F420N10T LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1F44N100Q3 IXYS

获取价格

1000V Q3-Class HiPerFET™ Power MOSFET In SM
MMIX1F44N100Q3 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1F520N075T2 IXYS

获取价格

Power Field-Effect Transistor, 500A I(D), 75V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
MMIX1F520N075T2 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1G120N120A3V1 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,
MMIX1G120N120A3V1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,