型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMIX1F520N075T2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500A I(D), 75V, 0.0016ohm, 1-Element, N-Channel, Silicon, M | |
MMIX1F520N075T2 | LITTELFUSE |
获取价格 |
SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系 | |
MMIX1G120N120A3V1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, | |
MMIX1G120N120A3V1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, | |
MMIX1G320N60B3 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | |
MMIX1G320N60B3 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | |
MMIX1G75N250 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2 | |
MMIX1G75N250 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2 | |
MMIX1H60N150V1 | LITTELFUSE |
获取价格 |
专为大功率脉冲和电容放电应用而设计? 由施加在栅极的电压接通(MOS结构 | |
MMIX1T132N50P3 | LITTELFUSE |
获取价格 |
SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系 |