Datasheet > MJD47R

MJD47R

更新时间： 2024-11-07 14:55:15

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	897K
描述
功率三极管

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数据手册

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MJD47R 数据手册

MJD47R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

350

250

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulesd

T_a= 25

I_CM

1.56

Power Dissipation

T_C= 25

P_tot

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

8.33

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

Dated: 03/11/2021 Rev: 01

1 / 5

12 3 4 5

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