MJD50RLG

更新时间： 2024-09-16 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率双极晶体管
页数	文件大小	规格书
5页	110K
描述
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD50RLG 数据手册

MJD47, MJD50

High Voltage Power

Transistors

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier,

SWITCHMODEt power supply drivers and other switching

applications.

http://onsemi.com

Features

NPN SILICON POWER

TRANSISTORS

1 AMPERE

250, 400 VOLTS, 15 WATTS

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Electrically Similar to Popular TIP47, and TIP50

• 250 and 400 V (Min) − V

CEO(sus)

• 1 A Rated Collector Current

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• These are Pb−Free Packages

DPAK

CASE 369C

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

CEO

Vdc

MJD47

MJD50

250

400

MARKING DIAGRAM

Collector−Base Voltage

Emitter−Base Voltage

Vdc

AYWW

JxxG

MJD47

MJD50

350

500

Vdc

Adc

Collector Current − Continuous

− Peak

= Assembly Location

= Year

WW = Work Week

Jxx = Device Code

xx = 47 or 50

Base Current

0.6

mAdc

Total Power Dissipation

0.12

@ T = 25°C

= Pb−Free Package

W/°C

Derate above 25°C

Total Power Dissipation (Note 1)

1.56

@ T = 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

0.0125

Derate above 25°C

W/°C

°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

8.33

Unit

°C/W

Thermal Resistance Junction−to−Case

Thermal Resistance Junction−to−Ambient

(Note 1)

Lead Temperature for Soldering Purpose

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

Publication Order Number:

January, 2011 − Rev. 10

MJD47/D

12 3 4 5

中文翻译

下载PDF

与MJD50RLG相关器件

型号	品牌	获取价格	描述	数据表
MJD50T4	MOTOROLA	获取价格	NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
MJD50T4	ONSEMI	获取价格	1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
MJD50T4G	ONSEMI	获取价格	High Voltage Power Transistors
MJD50TF	ONSEMI	获取价格	1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, 2000-REEL
MJD50TF	FAIRCHILD	获取价格	暂无描述
MJD50TF	JSMC	获取价格	DPAK
MJD5731	ONSEMI	获取价格	High Voltage PNP Silicon Power Transistors
MJD5731	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJD5731_11	ONSEMI	获取价格	High Voltage PNP Silicon Power Transistors
MJD5731-1	MOTOROLA	获取价格	1 A, 350 V, PNP, Si, POWER TRANSISTOR, CASE 369-05, DPAK-3