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MJD50 PDF预览

MJD50

更新时间: 2024-09-14 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 187K
描述
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

MJD50 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.15Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
功耗环境最大值:15 W最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:1 V
Base Number Matches:1

MJD50 数据手册

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Order this document  
by MJD47/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
DPAK For Surface Mount Applications  
NPN SILICON  
POWER TRANSISTORS  
1 AMPERE  
Designed for line operated audio output amplifier, switchmode power supply drivers  
and other switching applications.  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular TIP47, and TIP50  
250, 400 VOLTS  
15 WATTS  
250 and 400 V (Min) — V  
1 A Rated Collector Current  
CEO(sus)  
MAXIMUM RATINGS  
Rating  
Symbol  
MJD47  
250  
MJD50  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
CASE 369A–13  
V
CB  
350  
500  
V
EB  
5
Collector Current — Continuous  
Peak  
I
C
1
2
Base Current  
I
B
0.6  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
15  
0.12  
Watts  
W/ C  
CASE 369–07  
Total Power Dissipation* @ T = 25 C  
A
Derate above 25 C  
P
D
1.56  
0.0125  
Watts  
W/ C  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
80  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient*  
Lead Temperature for Soldering Purpose  
R
R
θJC  
θJA  
T
L
260  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1) MJD47  
Symbol  
Min  
Max  
Unit  
V
250  
400  
Vdc  
CEO(sus)  
(I = 30 mAdc, I = 0)  
MJD50  
C
B
Collector Cutoff Current  
I
mAdc  
CEO  
(V  
CE  
(V  
CE  
= 150 Vdc, I = 0)  
MJD47  
MJD50  
0.2  
0.2  
B
= 300 Vdc, I = 0)  
B
inches  
mm  
* When surface mounted on minimum pad sizes recommended.  
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

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