MJD50-1

更新时间： 2024-11-04 22:33:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	187K
描述
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

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MJD50-1 数据手册

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by MJD47/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

DPAK For Surface Mount Applications

NPN SILICON

POWER TRANSISTORS

1 AMPERE

Designed for line operated audio output amplifier, switchmode power supply drivers

and other switching applications.

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP47, and TIP50

250, 400 VOLTS

15 WATTS

250 and 400 V (Min) — V

1 A Rated Collector Current

CEO(sus)

MAXIMUM RATINGS

Rating

Symbol

MJD47

250

MJD50

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 369A–13

350

500

Collector Current — Continuous

Peak

Base Current

0.6

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

CASE 369–07

Total Power Dissipation* @ T = 25 C

Derate above 25 C

1.56

0.0125

Watts

W/ C

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

8.33

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

Lead Temperature for Soldering Purpose

θJC

θJA

260

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) MJD47

Symbol

Min

Max

Unit

250

400

—

Vdc

CEO(sus)

(I = 30 mAdc, I = 0)

MJD50

Collector Cutoff Current

mAdc

CEO

= 150 Vdc, I = 0)

MJD47

MJD50

—

0.2

= 300 Vdc, I = 0)

inches

* When surface mounted on minimum pad sizes recommended.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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