MJD50TF

更新时间： 2024-11-05 13:11:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率双极晶体管
页数	文件大小	规格书
4页	47K
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替代型号

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MJD50TF 数据手册

MJD47/50

High Voltage and High Reliability

D-PAK for Surface Mount Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP47 and TIP50

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

CBO

: MJD47

: MJD50

350

500

Collector-Emitter Voltage

CEO

: MJD47

: MJD50

250

400

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

EBO

0.6

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: MJD47

: MJD50

= 30mA, I = 0

250

400

Collector Cut-off Current

: MJD47

= 150V, I = 0

0.2

: MJD50

= 300V, I = 0

Collector Cut-off Current

: MJD47

= 350, V = 0

0.1

: MJD50

= 500, V = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

= 10V, I = 0.3A

150

= 10V, I = 1A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

= 1A, I = 0.2A

(sat)

= 10A, I = 1A

1.5

=10V, I = 0.2A

MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4

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MJD50TF 替代型号

型号	品牌	替代类型	描述	数据表
MJD50	ONSEMI	类似代替	NPN SILICON POWER TRANSISTORS
MJD50T4G	ONSEMI	功能相似	High Voltage Power Transistors

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