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MJD50T4G PDF预览

MJD50T4G

更新时间: 2024-11-05 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
High Voltage Power Transistors

MJD50T4G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:0.49外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

MJD50T4G 数据手册

 浏览型号MJD50T4G的Datasheet PDF文件第2页浏览型号MJD50T4G的Datasheet PDF文件第3页浏览型号MJD50T4G的Datasheet PDF文件第4页浏览型号MJD50T4G的Datasheet PDF文件第5页 
MJD47, MJD50  
High Voltage Power  
Transistors  
DPAK For Surface Mount Applications  
Designed for line operated audio output amplifier,  
SWITCHMODEt power supply drivers and other switching  
applications.  
http://onsemi.com  
Features  
NPN SILICON POWER  
TRANSISTORS  
1 AMPERE  
250, 400 VOLTS, 15 WATTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Electrically Similar to Popular TIP47, and TIP50  
250 and 400 V (Min) V  
CEO(sus)  
1 A Rated Collector Current  
4
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
2
1
Machine Model, C u 400 V  
3
These are PbFree Packages  
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
CollectorEmitter Voltage  
V
CEO  
Vdc  
MJD47  
MJD50  
250  
400  
MARKING DIAGRAM  
CollectorBase Voltage  
EmitterBase Voltage  
V
Vdc  
CB  
AYWW  
JxxG  
MJD47  
MJD50  
350  
500  
V
5
Vdc  
Adc  
EB  
I
1
2
Collector Current Continuous  
Peak  
C
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Jxx = Device Code  
xx = 47 or 50  
Base Current  
I
0.6  
mAdc  
W
B
Total Power Dissipation  
P
D
15  
0.12  
@ T = 25°C  
C
G
= PbFree Package  
W/°C  
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
W
D
1.56  
@ T = 25°C  
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
0.0125  
Derate above 25°C  
W/°C  
°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
80  
Unit  
°C/W  
°C/W  
Thermal Resistance JunctiontoCase  
R
q
JC  
Thermal Resistance JunctiontoAmbient  
R
q
JA  
(Note 1)  
Lead Temperature for Soldering Purpose  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 10  
MJD47/D  
 

MJD50T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD50T4 ONSEMI

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1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
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