是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 0.49 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD50T4 | ONSEMI |
完全替代 |
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor | |
MJD50 | ONSEMI |
完全替代 |
NPN SILICON POWER TRANSISTORS | |
MJD50G | ONSEMI |
类似代替 |
High Voltage Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD50TF | ONSEMI |
获取价格 |
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, 2000-REEL | |
MJD50TF | FAIRCHILD |
获取价格 |
暂无描述 | |
MJD50TF | JSMC |
获取价格 |
DPAK | |
MJD5731 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors | |
MJD5731 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD5731_11 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors | |
MJD5731-1 | MOTOROLA |
获取价格 |
1 A, 350 V, PNP, Si, POWER TRANSISTOR, CASE 369-05, DPAK-3 | |
MJD5731T4 | MOTOROLA |
获取价格 |
1A, 350V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 | |
MJD5731T4 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors | |
MJD5731T4G | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors |