Datasheet > MJD50

MJD50

更新时间： 2024-11-05 12:55:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

获取价格

数据手册

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MJD50 数据手册

SMD Type

Transistors

NPN Epitaxial Silicon Transistor

MJD47;MJD50

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Load Formed for Surface Mount Application

Straight Lead

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25 unless otherwise noted

Parameter

Collector-Emitter Voltage MJD47

MJD50

Symbol

Rating

350

500

250

400

Unit

VCBO

Collector-Emitter Voltage MJD47

MJD50

VCEO

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

V^EBO

I^C

I^CP

I^B

0.6

Collector Dissipation (TC=25

Collector Dissipation (Ta=25

Junction Temperature

)

1.56

150

-65 to 150

)

T^J

Storage Temperature

TSTG

Electrical Characteristics Ta = 25 unless otherwise noted

Parameter

Collector-Emitter Sustaining Voltage * MJD47

MJD50

Symbol

Testconditons

Min

250

400

Typ

Max

Unit

VCEO(sus)

I^C= 30mA, IB = 0

Collector Cut-off Current

MJD47

MJD50

MJD47

MJD50

V^CE= 150V, IB = 0

V^CE= 300V, IB = 0

V^CE= 350, VEB = 0

V^CE= 500, VEB = 0

VBE = 5V, IC = 0

0.2

0.1

ICEO

ICES

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain *

I^EBO

hFE

V^CE= 10V, IC = 0.3A

V^CE= 10V, IC = 1A

IC = 1A, IB = 0.2A

VCE = 10A, IC = 1A

VCE =10V, IC = 0.2A

150

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

Current Gain Bandwidth Product

V^CE(sat)

V^BE(sat)

1.5

MHz

*Pulse Test: PW 300ìs, Duty Cycle 2%

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