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MJD49T4 PDF预览

MJD49T4

更新时间: 2024-11-04 22:26:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
6页 145K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

MJD49T4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:TO-252, DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

MJD49T4 数据手册

 浏览型号MJD49T4的Datasheet PDF文件第2页浏览型号MJD49T4的Datasheet PDF文件第3页浏览型号MJD49T4的Datasheet PDF文件第4页浏览型号MJD49T4的Datasheet PDF文件第5页浏览型号MJD49T4的Datasheet PDF文件第6页 
MJD49T4  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
HIGH VOLTAGE CAPABILITY  
SURFACE-MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
ELECTRICALLY SIMILAR TO TIP49  
3
APPLICATIONS  
1
SWITCH MODE POWER SUPPLIES  
AUDIO AMPLIFIERS  
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER  
DPAK  
TO-252  
(Suffix "T4")  
DESCRIPTION  
The MJD49T4 is manufactured using Medium  
Voltage Epitaxial Planar technology, resulting in a  
rugged high performance cost-effective transistor.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
450  
V
V
350  
5
V
1
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
2
0.6  
A
IB  
A
IBM  
Base Peak Current (tp < 5 ms)  
1.2  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
15  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
October 2003  

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