Datasheet > MJD5731

MJD5731

更新时间： 2024-09-14 22:33:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
8页	99K
描述
High Voltage PNP Silicon Power Transistors

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MJD5731 数据手册

MJD5731

Preferred Device

High Voltage PNP Silicon

Power Transistors

. . . designed for line operated audio output amplifier,

SWITCHMODE power supply drivers and other switching

applications.

http://onsemi.com

• 350 V (Min) - V

CEO(sus)

• 1.0 A Rated Collector Current

• PNP Complements to the MJD47 thru MJD50 Series

SILICON

POWER TRANSISTORS

1.0 A, 350 V

MAXIMUM RATINGS

15 W

Rating

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-

Symbol MJD5731

Unit

Vdc

Adc

350

CEO

MARKING

DIAGRAM

Continuous

Peak

1.0

3.0

Total Power Dissipation

J5731

@ T = 25°C

0.12

Watts

W/°C

Derate above 25°C

Total Power Dissipation (1)

DPAK

CASE 369

@ T = 25°C

1.56

0.0125

Watts

W/°C

Derate above 25°C

Unclamped Inductive Load Energy

(See Figure )

Operating and Storage Junction

Temperature Range

T , T

- 55 to 150

°C

stg

J5731

THERMAL CHARACTERISTICS

Characteristic

DPAK

CASE 369A

Style 1

Symbol

Max

8.33

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

= Specific Device Code

= Assembly Location

Lead Temperature for Soldering

260

°C

WL, L = Wafer Lot

1. These ratings are applicable when surface mounted on the minimum pad size

recommended.

YY, Y

= Year

WW, W = Work Week

ORDERING INFORMATION

Device

Package

Shipping

MJD5731T4

DPAK

2500/ Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

March, 2003 - Rev. 0

MJD5731/D

12 3 4 5 6 7 8

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MJD5731_11	ONSEMI	获取价格	High Voltage PNP Silicon Power Transistors
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MJD5731T4	ONSEMI	获取价格	High Voltage PNP Silicon Power Transistors
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