Datasheet > MJD50_12

MJD50_12

更新时间： 2024-11-06 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	226K
描述
NPN Epitaxial Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD50_12 数据手册

February 2012

MJD47/50

NPN Epitaxial Silicon Transistor

Features

• High Voltage and High Reliability D-PAK for Surface Mount Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP47 and TIP50

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Collector-Emitter Voltage

Value

Units

V_CBO

: MJD47

: MJD50

350

500

V_CEO

Collector-Emitter Voltage

: MJD47

: MJD50

250

400

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

0.6

P_C

Collector Dissipation (T_C= 25°C)

Collector Dissipation (T_a= 25°C)

Junction Temperature

°C

1.56

150

T_J

T_STG

Storage Temperature

- 65 to 150

Ordering Information

Part Number

MJD47TF

Marking

Package

D-PAK

Packing Method

Tape & Reel

Remarks

MJD47

MJD50

MJD50TF

D-PAK

Tape & Reel

MJD47/50 Rev. B0

www.fairchildsemi.com

12 3 4 5

中文翻译

下载PDF

与MJD50_12相关器件

型号	品牌	获取价格	描述	数据表
MJD50-1	MOTOROLA	获取价格	NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
MJD50G	ONSEMI	获取价格	High Voltage Power Transistors
MJD50I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD50RLG	ONSEMI	获取价格	1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
MJD50T4	MOTOROLA	获取价格	NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
MJD50T4	ONSEMI	获取价格	1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
MJD50T4G	ONSEMI	获取价格	High Voltage Power Transistors
MJD50TF	ONSEMI	获取价格	1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, 2000-REEL
MJD50TF	FAIRCHILD	获取价格	暂无描述
MJD50TF	JSMC	获取价格	DPAK