Datasheet > MJD50_12

MJD50_12

更新时间： 2024-11-05 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	226K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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MJD50_12 数据手册

February 2012

MJD47/50

NPN Epitaxial Silicon Transistor

Features

• High Voltage and High Reliability D-PAK for Surface Mount Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP47 and TIP50

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Collector-Emitter Voltage

Value

Units

V_CBO

: MJD47

: MJD50

350

500

V_CEO

Collector-Emitter Voltage

: MJD47

: MJD50

250

400

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

0.6

P_C

Collector Dissipation (T_C= 25°C)

Collector Dissipation (T_a= 25°C)

Junction Temperature

°C

1.56

150

T_J

T_STG

Storage Temperature

- 65 to 150

Ordering Information

Part Number

MJD47TF

Marking

Package

D-PAK

Packing Method

Tape & Reel

Remarks

MJD47

MJD50

MJD50TF

D-PAK

Tape & Reel

MJD47/50 Rev. B0

www.fairchildsemi.com

12 3 4 5

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MJD50T4G	ONSEMI	获取价格	High Voltage Power Transistors
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MJD50TF	FAIRCHILD	获取价格	暂无描述
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