生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.15 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PDSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 15 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD50T4G | ONSEMI |
获取价格 |
High Voltage Power Transistors | |
MJD50TF | ONSEMI |
获取价格 |
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, 2000-REEL | |
MJD50TF | FAIRCHILD |
获取价格 |
暂无描述 | |
MJD50TF | JSMC |
获取价格 |
DPAK | |
MJD5731 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors | |
MJD5731 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD5731_11 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors | |
MJD5731-1 | MOTOROLA |
获取价格 |
1 A, 350 V, PNP, Si, POWER TRANSISTOR, CASE 369-05, DPAK-3 | |
MJD5731T4 | MOTOROLA |
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1A, 350V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 | |
MJD5731T4 | ONSEMI |
获取价格 |
High Voltage PNP Silicon Power Transistors |