品牌 | Logo | 应用领域 |
银河微电 - BL Galaxy Electrical | / | |
页数 | 文件大小 | 规格书 |
5页 | 420K | |
描述 | ||
100V,3A,Medium Power NPN Bipolar Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD31C(TO-252) | BL Galaxy Electrical |
获取价格 |
100V,3A,Medium Power NPN Bipolar Transistor | |
MJD31C1 | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31C1 | MOTOROLA |
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Transistor | |
MJD31C-1 | MOTOROLA |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
MJD31C-1 | ONSEMI |
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3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3 | |
MJD31C1G | ONSEMI |
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Complementary Power Transistors | |
MJD31CA | NEXPERIA |
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100 V, 3 A NPN high power bipolar transistorProduction | |
MJD31CEITU | ONSEMI |
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3.0 A, 100 V NPN Bipolar Power Transistor | |
MJD31CG | ONSEMI |
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Complementary Power Transistors | |
MJD31CHE3 | MCC |
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