KSC5502

更新时间： 2024-09-21 04:21:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
8页	249K
描述
NPN Planar Silicon Transistor

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中文翻译

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数据手册

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KSC5502 数据手册

April 2008

KSC5502

NPN Planar Silicon Transistor

High Voltage Power Switch Mode Application

•

Small Variance in Storage Time

Wide Safe Operating Area

Suitable for Electronic Ballast Application

Equivalent Circuit

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings * T_C=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

1200

Collector-Emitter Voltage

Emitter-Base Voltage

600

Collector Current (DC)

I_CP

Collector Current (Pulse)**

Base Current (DC)

I_B

I_BP

Collector Current (Pulse)**

Collector Dissipation(T_C=25°C)

Junction Temperature

P_C

°C

T_J

150

T_STG

EAS

Storage Junction Temperature Range

Avalanche Energy(T_j=25°C)

- 65 ~ 150

2.5

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

** Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Thermal Characteristics T_a=25°C unless otherwise noted

Symbol

Parameter

Value

2.5

Units

°C/W

R_θJC

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJA

°C/W

Ordering Information

Part Number

Marking

Package

Packing Method

KSC5502TU

J5502

TO-220

TUBE

KSC5502 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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