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KSC5502DTM PDF预览

KSC5502DTM

更新时间： 2024-11-15 11:10:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
13页 438K
描述
NPN型三重扩散平面硅晶体管

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中文翻译

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KSC5502DTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：DPAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.05
最大集电极电流 (IC)：2 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：4
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：11 MHzBase Number Matches：1

KSC5502DTM 数据手册

 浏览型号KSC5502DTM的Datasheet PDF文件第2页浏览型号KSC5502DTM的Datasheet PDF文件第3页浏览型号KSC5502DTM的Datasheet PDF文件第4页浏览型号KSC5502DTM的Datasheet PDF文件第5页浏览型号KSC5502DTM的Datasheet PDF文件第6页浏览型号KSC5502DTM的Datasheet PDF文件第7页 
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中文翻译

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KSC5502DTM 替代型号

型号 品牌 替代类型 描述 数据表
KSC5502DTM FAIRCHILD

功能相似

 Power Bipolar Transistor, 2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSC5502D FAIRCHILD

功能相似

 High Voltage Power Switch Switching Application

与KSC5502DTM相关器件

型号 品牌 获取价格 描述 数据表
KSC5502DTTU FAIRCHILD

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 		暂无描述
KSC5502DTTU ONSEMI

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 		NPN 三扩散平面硅晶体管
KSC5502TU FAIRCHILD

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 		NPN Planar Silicon Transistor
KSC5502TU ONSEMI

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 		NPN 平面硅晶体管
KSC5504D FAIRCHILD

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 		High Voltage High Speed Power Switch Application
KSC5504DJ69Z FAIRCHILD

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 		Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5504DT FAIRCHILD

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 		High Voltage High Speed Power Switch Application
KSC5504DTTU ROCHESTER

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 		4A, 600V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
KSC5603D FAIRCHILD

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 		High Voltage High Speed Power Switch Application
KSC5603D_10 FAIRCHILD

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 		NPN Silicon Transistor, Planar Silicon Transistor

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