生命周期: | Obsolete | 零件包装代码: | TO-263 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 11 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC5801 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) | |
KSC5801TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5801YDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802 | FAIRCHILD |
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High Voltage Color Display Horizontal Deflection Output (No Damper Diode) | |
KSC5802ASDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802ATBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802AYDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802D | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode) | |
KSC5802DTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802DYDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |