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KSC5603DWTM PDF预览

KSC5603DWTM

更新时间: 2024-11-14 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
5页 86K
描述
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, D2PAK-3

KSC5603DWTM 技术参数

生命周期:Obsolete零件包装代码:TO-263
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.82
最大集电极电流 (IC):3 A集电极-发射极最大电压:800 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):11 MHzBase Number Matches:1

KSC5603DWTM 数据手册

 浏览型号KSC5603DWTM的Datasheet PDF文件第2页浏览型号KSC5603DWTM的Datasheet PDF文件第3页浏览型号KSC5603DWTM的Datasheet PDF文件第4页浏览型号KSC5603DWTM的Datasheet PDF文件第5页 
KSC5603D  
High Voltage High Speed Power Switch  
Equivalent Circuit  
C
Application  
Wide Safe Operating Area  
Built-in Free Wheeling Diode  
Suitable for Electronic Ballast Application  
Small Variance in Storage Time  
B
TO-220  
1
1.Base 2.Collector 3.Emitter  
E
NPN Silicon Transistor Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1600  
800  
12  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
CEO  
EBO  
V
I
I
I
I
3
A
C
6
A
CP  
B
2
A
*Base Current (Pulse)  
4
A
BP  
P
Power Dissipation(T =25°C)  
100  
150  
W
°C  
C
C
T
Junction Temperature  
J
T
Storage Temperature  
- 65 ~ 150  
°C  
STG  
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
1.25  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
62.5  
θja  
T
Maximun Lead Temperature for Soldering Purpose  
: 1/8” from Case for 5 seconds  
270  
°C  
L
©2003 Fairchild Semiconductor Corporation  
Rev. C1, June 2003  

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