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KSC5802

更新时间: 2024-01-30 18:48:10
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 显示器二极管高压
页数 文件大小 规格书
5页 85K
描述
High Voltage Color Display Horizontal Deflection Output (No Damper Diode)

KSC5802 技术参数

生命周期:Obsolete零件包装代码:TO-3PF
包装说明:TO-3PF, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):7JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSC5802 数据手册

 浏览型号KSC5802的Datasheet PDF文件第2页浏览型号KSC5802的Datasheet PDF文件第3页浏览型号KSC5802的Datasheet PDF文件第4页浏览型号KSC5802的Datasheet PDF文件第5页 
KSC5802  
High Voltage Color Display Horizontal  
Deflection Output  
(No Damper Diode)  
High Breakdown Voltage : BV  
=1500V  
CBO  
High Speed Switching : t =0.1µs (Typ.)  
Wide S.O.A  
For C-Monitor(69KHz)  
F
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1500  
800  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
V
6
V
I
I
10  
A
C
30  
A
CP  
P
Collector Dissipation (T =25°C)  
60  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
1
Units  
I
I
I
V
= 1400V, V =0  
mA  
uA  
CES  
CE  
BE  
V
V
= 800V, I = 0  
10  
1
CBO  
EBO  
CB  
EB  
E
= 4V, I = 0  
mA  
C
h
h
V
V
= 5V, I = 1A  
15  
7
48  
10  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 6A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Fall Time  
I
I
= 6A, I = 1.5A  
3
V
V
CE  
C
C
B
= 6A, I = 1.5A  
1.5  
0.3  
BE  
B
t
V
= 200V, I = 6A  
0.1  
µs  
F
CC  
C
I
= 1.2A, I = - 2.4A  
B1  
B2  
R = 33.3Ω  
L
©2000 Fairchild Semiconductor International  
Rev. B. February 2000  

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