Datasheet > KSC5603D_10

KSC5603D_10

更新时间： 2024-11-14 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	115K
描述
NPN Silicon Transistor, Planar Silicon Transistor

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中文翻译

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数据手册

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KSC5603D_10 数据手册

February 2010

KSC5603D

NPN Silicon Transistor, Planar Silicon Transistor

Features

Equivalent Circuit

• High Voltage High Speed Power Switch Application

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

1600

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

800

I_CP

I_B

I_BP

*Base Current (Pulse)

Power Dissipation(T_C=25°C)

Junction Temperature

Storage Temperature

100

P_C

°C

T_J

150

T_STG

-65 to +150

* Pulse Test: Pulse Width=5ms, Duty Cycle<10%

Thermal Characteristics T_A= 25°C unless otherwise noted

Symbol

R_θJC

Parameter

Junction to Case

Junction to Ambient

Rating

1.25

Units

°C/W

Thermal Resistance

R_θJA

Maximun Lead Temperature for Soldering Purpose

: 1/8” from Case for 5 seconds

T_L

270

°C

KSC5603D Rev. C2

www.fairchildsemi.com

12 3 4 5

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